HY57V64420HGTP
4 Banks x 4M x 4Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V64420HGTP is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which
require large memory density and high bandwidth. HY57V64420HGTP is organized as 4banks of 4,194,304x4.
HY57V644020HGTP is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are syn-
chronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and out-
put voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by
a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of read
or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or
write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
FEATURES
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Single 3.3±0.3V power supply
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Auto refresh and self refresh
All device pins are compatible with LVTTL interface
4096 refresh cycles / 64ms
JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
pitch
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
Lead Free
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All inputs and outputs referenced to positive edge of system
clock
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Data mask function by DQM
Internal four banks operation
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ORDERING INFORMATION
Part No.
Clock Frequency
Power
Organization
Interface
Package
HY57V64420HGTP-5/55/6/7
HY57V64420HGTP-K
HY57V64420HGTP-H
HY57V64420HGTP-P
HY57V64420HGTP-S
HY57V64420HGLTP-5/55/6/7
HY57V64420HGLTP-K
HY57V64420HGLTP-H
HY57V64420HGLTP-P
HY57V64420HGLTP-S
200/183/166/143MHz
133MHz
133MHz
Normal
100MHz
100MHz
4Banks x 4Mbits x4
LVTTL
400mil 54pin TSOP II
200/183/166/143MHz
133MHz
133MHz
Low power
100MHz
100MHz
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 0.5 / Apr. 2004
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