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HY57V643220D PDF预览

HY57V643220D

更新时间: 2024-11-27 04:58:03
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器
页数 文件大小 规格书
13页 219K
描述
4Banks x 512K x 32bits Synchronous DRAM

HY57V643220D 数据手册

 浏览型号HY57V643220D的Datasheet PDF文件第2页浏览型号HY57V643220D的Datasheet PDF文件第3页浏览型号HY57V643220D的Datasheet PDF文件第4页浏览型号HY57V643220D的Datasheet PDF文件第5页浏览型号HY57V643220D的Datasheet PDF文件第6页浏览型号HY57V643220D的Datasheet PDF文件第7页 
HY57V643220D(L/S)T(P) Series  
4Banks x 512K x 32bits Synchronous DRAM  
Document Title  
4Bank x 512K x 32bits Synchronous DRAM  
Revision History  
Revision  
History  
No.  
Draft Date  
Remark  
0.1  
0.2  
Initial Draft  
May. 2004  
July 2004  
Preliminary  
Removed Preliminary  
1. Updated Output Load Capacitance for Access Time Measurement CL = 30pF  
in AC OPERATING TEST CONDITION  
2. Updated the tolerance zone of the leads and the description of the package  
type in PACKAGE DIMENSION  
0.3  
Sep. 2004  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev. 0.3 / Sep. 2004  
1

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