Datasheet > HY57V28820ET-H

HY57V28820ET-H

更新时间： 2024-11-25 06:34:11

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器光电二极管
页数	文件大小	规格书
13页	115K
描述
Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

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HY57V28820ET-H 数据手册

128Mb Synchronous DRAM based on 4M x 4Bank x8 I/O

Document Title

4Bank x 4M x 8bits Synchronous DRAM

Revision History

Revision No.

History

Draft Date

Remark

1.0

First Version Release

Apr. 2005

Correct the CAPACITANCE(Page08) values for 133MHz Product

CI1 2.0(min) / 4.0(max) --> 2.5(min) / 3.5(max)

CI1 2.5(min) / 5.0(max) --> 2.5(min) / 3.8(max)

CI1 3.0(min) / 5.5(max) --> 4.0(min) / 6.5(max)

1.1

Jun. 2005

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.1 / Jun. 2005

12 3 4 5 6 7...13

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型号	品牌	获取价格	描述	数据表
HY57V28820HCLT	ETC	获取价格	16Mx8\|3.3V\|4K\|6\|SDR SDRAM - 128M
HY57V28820HCLT-6	ETC	获取价格	x8 SDRAM
HY57V28820HCLT-6I	HYNIX	获取价格	4Banks x 4M x 8bits Synchronous DRAM
HY57V28820HCLT-8	ETC	获取价格	x8 SDRAM
HY57V28820HCLT-8I	HYNIX	获取价格	4Banks x 4M x 8bits Synchronous DRAM
HY57V28820HCLT-H	ETC	获取价格	x8 SDRAM
HY57V28820HCLT-HI	HYNIX	获取价格	4Banks x 4M x 8bits Synchronous DRAM
HY57V28820HCLT-I	HYNIX	获取价格	4Banks x 4M x 8bits Synchronous DRAM
HY57V28820HCLT-K	ETC	获取价格	x8 SDRAM
HY57V28820HCLT-KI	HYNIX	获取价格	4Banks x 4M x 8bits Synchronous DRAM