Datasheet > HY2N70T

HY2N70T

更新时间： 2024-02-12 05:05:59

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
4页	152K
描述
700V / 2A N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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HY2N70T 数据手册

HY2N70T / HY2N70FT

700V / 2A

700V, R_DS(ON)=6.5W@V_GS=10V, I_D=1A

N-Channel Enhancement Mode MOSFET

Features

• Low On-State Resistance

TO-220AB

ITO-220AB

• Fast Switching

• Low Gate Charge & Low C_RSS

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charger and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

Mechanical Information

• Case: TO-220AB / ITO-220AB Molded Plastic

Drain

• Terminals : Solderable per MIL-STD-750,Method 2026

Marking & Ordering Information

TYPE

MARKING

PACKAGE

TO-220AB

ITO-220AB

PACKING

50PCS/TUBE

Gate

HY2N70T

HY2N70FT

2N70T

Source

2N70FT

Absolute Maximum Ratings (T_C=25°C unless otherwise specified )

Parameter

Symbol

V_DS

HY2N70T

HY2N70FT

Units

Drain-Source Voltage

Gate-Source Voltage

700

+30

V_GS

I_D

Continuous Drain Current

Pulsed Drain Current ¹⁾

T_C=25℃

I_DM

44.5

0.36

19.2

0.16

Maximum Power Dissipation

Derating Factor

P_D

Avalanche Energy with Single Pulse

I_AS=2A, V_DD=60V, L=60mH

E_AS

120

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

℃

Note : 1. Maximum DC current limited by the package

Thermal Characteristics

Parameter

Junction-to-Case Thermal Resistance

Symbol

HY2N70T

HY2N70FT

6.5

Units

℃/W

R_qJC

R_qJA

2.8

110

℃/W

COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE

PAGE.1

REV 1.0, 20-Sept-2012

12 3 4

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