Datasheet > HY3003V

HY3003V

更新时间： 2022-02-26 12:13:23

品牌	Logo	应用领域
华羿微 - HUAYI		/
页数	文件大小	规格书
12页	911K
描述
N-Channel Enhancement Mode MOSFET

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数据手册

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HY3003V 数据手册

HY3003D/U/V

N-Channel Enhancement Mode MOSFET

Features

Pin Description

•

30V/100A

_DS(ON)= 3.5m(typ.) @ V_GS=10V

•

100% EAS Guaranteed

Super Low Gate Charge

Excellent CdV/dt effect decline

Advanced high cell density Trench technology

TO-251-3L

TO-251-3S

TO-252-2L

Applications

High Frequency Synchronous Buck

Converters for Computer Processor Power



High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use



N-ChannelMOSFET

Ordering and Marking Information

Package Code

D : TO-252-2L

S : TO-251-3S

U : TO-251-3L

HY3003

Assembly Material

G : Lead Free Device

Date Code

YYXXX WW

YYXXXJWW G YYXXXJWW G YYXXXJWW G

Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate

Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-

Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed

900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to

this pr-oduct and/or to this document at any time without notice.

V1.1

www.hymexa.com

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