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HY29DL162BT-80I PDF预览

HY29DL162BT-80I

更新时间： 2024-02-01 23:51:23
品牌 Logo 应用领域
海力士 - HYNIX 闪存
页数 文件大小 规格书
48页 548K
描述
16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

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中文翻译

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HY29DL162BT-80I 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：TSOP-48
针数：48Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.77最长访问时间：80 ns
备用内存宽度：8启动块：BOTTOM
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
JESD-609代码：e0长度：18.4 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
部门数/规模：8,31端子数量：48
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3/3.3 V
编程电压：3 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：8K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.045 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：YES
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

HY29DL162BT-80I 数据手册

 浏览型号HY29DL162BT-80I的Datasheet PDF文件第2页浏览型号HY29DL162BT-80I的Datasheet PDF文件第3页浏览型号HY29DL162BT-80I的Datasheet PDF文件第4页浏览型号HY29DL162BT-80I的Datasheet PDF文件第5页浏览型号HY29DL162BT-80I的Datasheet PDF文件第6页浏览型号HY29DL162BT-80I的Datasheet PDF文件第7页 
HY29DL162/HY29DL163  
16 Megabit (2M x 8/1M x16) Low Voltage,  
Dual Bank, Simultaneous Read/Write Flash Memory  
KEY FEATURES  
n Data# Polling and Toggle Bits  
n Single Power Supply Operation  
− Read, program, and erase operations  
from 2.7 to 3.6 V  
− Provide software confirmation of completion  
of program or erase operations  
n Ready/Busy# Pin  
− Ideal for battery-powered applications  
n Simultaneous Read/Write Operations  
− Host system can program or erase in one  
bank while simultaneously reading from any  
sector in the other bank with zero latency  
between read and write operations  
n High Performance  
− Provides hardware confirmation of  
completion of program or erase operations  
n Erase Suspend  
− Suspends an erase operation to allow  
programming data to or reading data from  
a sector in the same bank  
− Erase Resume can then be invoked to  
complete the suspended erasure  
n Hardware Reset Pin (RESET#) Resets the  
Device to Reading Array Data  
− 70 and 80 ns access time versions with  
30pF load  
− 90 and 120 ns access time versions with  
100pF load  
n WP#/ACC Input Pin  
n Ultra Low Power Consumption (Typical  
Values)  
− Write protect (WP#) function allows  
hardware protection of two outermost boot  
sectors, regardless of sector protect status  
− Acceleration (ACC) function provides  
accelerated program times  
− Automatic sleep mode current: 200 nA  
− Standby mode current: 200 nA  
− Read current: 10 mA (at 5 MHz)  
− Program/erase current: 15 mA  
n Boot-Block Sector Architecture with 39  
Sectors in Two Banks for Fast In-System  
Code Changes  
n Fast Program and Erase Times  
− Sector erase time: 0.5 sec typical  
− Byte/Word program time utilizing  
Acceleration function: 10 µs typical  
n Space Efficient Packaging  
n Secured Sector: An Extra 64 Kbyte Sector  
that Can Be:  
− 48-pin TSOP and 48-ball FBGA packages  
− Factory locked and identifiable: 16 bytes  
available for a secure, random factory-  
programmed Electronic Serial Number  
− Customer lockable: Can be read, program-  
med, or erased just like other sectors  
n Flexible Sector Architecture  
− Sector Protection allows locking of a  
sector or sectors to prevent program or  
erase operations within that sector  
− Temporary Sector Unprotect allows  
changes in locked sectors (requires high  
voltage on RESET# pin)  
n Automatic Erase Algorithm Erases Any  
Combination of Sectors or the Entire Chip  
n Automatic Program Algorithm Writes and  
Verifies Data at Specified Addresses  
n Compliant with Common Flash Memory  
Interface (CFI) Specification  
LOGIC DIAGRAM  
20  
8
7
A[19:0]  
CE#  
DQ[7:0]  
DQ[14:8]  
DQ[15]/A[-1]  
WP#/ACC  
RY/BY#  
OE#  
W E#  
RESET#  
BYTE#  
n Minimum 100,000 Write Cycles per Sector  
(1,000,000 cycles Typical)  
n Compatible with JEDEC Standards  
− Pinout and software compatible with  
single-power supply Flash devices  
− Superior inadvertent write protection  
Preliminary  
Revision 1.3, June 2001  
1234567...48

中文翻译

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 		16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
HY29DL162TF-90 HYNIX

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