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HY27US08121M-VPCB PDF预览

HY27US08121M-VPCB

更新时间: 2024-11-24 05:15:11
品牌 Logo 应用领域
海力士 - HYNIX 光电二极管内存集成电路
页数 文件大小 规格书
43页 729K
描述
Flash, 64MX8, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48

HY27US08121M-VPCB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:VSSOP,
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.84最长访问时间:12000 ns
JESD-30 代码:R-PDSO-G48长度:15.4 mm
内存密度:536870912 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:48字数:67108864 words
字数代码:64000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX8封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:3.3 V
认证状态:Not Qualified座面最大高度:0.7 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
类型:SLC NAND TYPE宽度:12 mm

HY27US08121M-VPCB 数据手册

 浏览型号HY27US08121M-VPCB的Datasheet PDF文件第2页浏览型号HY27US08121M-VPCB的Datasheet PDF文件第3页浏览型号HY27US08121M-VPCB的Datasheet PDF文件第4页浏览型号HY27US08121M-VPCB的Datasheet PDF文件第5页浏览型号HY27US08121M-VPCB的Datasheet PDF文件第6页浏览型号HY27US08121M-VPCB的Datasheet PDF文件第7页 
HY27SS(08/16)121M Series  
HY27US(08/16)121M Series  
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash  
Document Title  
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory  
Revision History  
No.  
0.0  
0.1  
0.2  
0.3  
History  
Draft Date  
Sep.17.2003  
Oct.07.2003  
Nov.08.2003  
Dec.01.2003  
Remark  
Preliminary  
Preliminary  
Preliminary  
Preliminary  
Initial Draft  
Renewal Product Group  
Make a decision of PKG information  
Append 1.8V Operation Product to Data sheet  
1) Add Errata  
tWC tWH tWP tRC tREH tRP tREA@ID Read  
Specification  
50  
60  
15  
20  
25  
40  
50  
60  
15  
20  
30  
40  
35  
45  
Relaxed value  
0.4  
Mar.28.2004  
Preliminary  
2) Modify the description of Device Operations  
- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled  
(Enabled) (Page22)  
3) Add the description of System Interface Using CE don’t care  
(Page37)  
1) Delete Errata  
2) Change Characteristics (3V Product)  
tCRY  
tREA@ID Read  
0.5  
0.6  
Jun. 01. 2004  
Oct. 20. 2004  
Preliminary  
Before  
After  
60 + tr  
70 + tr  
35  
45  
3) Delete Cache Program  
1) Change TSOP1, WSOP1, FBGA package dimension  
2) Edit TSOP1, WSOP1 package figures  
3) Change FBGA package figure  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev 0.6 / Oct. 2004  
1

与HY27US08121M-VPCB相关器件

型号 品牌 获取价格 描述 数据表
HY27US08121M-VPCP HYNIX

获取价格

Flash, 64MX8, 12000ns, PDSO48, 17 X 12 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48
HY27US08121M-VPCS HYNIX

获取价格

Flash, 64MX8, 12000ns, PDSO48, 17 X 12 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48
HY27US08121M-VPEP HYNIX

获取价格

Flash, 64MX8, 12000ns, PDSO48, 17 X 12 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48
HY27US08121M-VPES HYNIX

获取价格

Flash, 64MX8, 12000ns, PDSO48, 17 X 12 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48
HY27US08121M-VPIB HYNIX

获取价格

Flash, 64MX8, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48
HY27US08122B HYNIX

获取价格

512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27US08122B-FCB HYNIX

获取价格

Flash, 64MX8, 18ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63
HY27US08122B-FCS HYNIX

获取价格

Flash, 64MX8, 18ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63
HY27US08122B-FIB HYNIX

获取价格

Flash, 64MX8, 18ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63
HY27US08122B-FIS HYNIX

获取价格

Flash, 64MX8, 18ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63