生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, DIP42,.6 | 针数: | 42 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.84 |
Is Samacsys: | N | 最长访问时间: | 120 ns |
备用内存宽度: | 8 | JESD-30 代码: | R-PDIP-T42 |
长度: | 52.451 mm | 内存密度: | 16777216 bit |
内存集成电路类型: | MASK ROM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 42 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 1MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP42,.6 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 4.826 mm | 最大待机电流: | 0.00005 A |
子类别: | MASK ROMs | 最大压摆率: | 0.035 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY23V16202F | ETC |
获取价格 |
1MX16/2MX8 BIT CMOS MASK ROM | |
HY23V16202F-120 | HYNIX |
获取价格 |
MASK ROM, 1MX16, 120ns, CMOS, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48 | |
HY23V16202M | ETC |
获取价格 |
1MX16/2MX8 BIT CMOS MASK ROM | |
HY23V16202M-100 | HYNIX |
获取价格 |
MASK ROM, 1MX16, 100ns, CMOS, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48 | |
HY23V16202M-120 | HYNIX |
获取价格 |
MASK ROM, 1MX16, 120ns, CMOS, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48 | |
HY23V16202S | ETC |
获取价格 |
1MX16/2MX8 BIT CMOS MASK ROM | |
HY23V16202T | ETC |
获取价格 |
1MX16/2MX8 BIT CMOS MASK ROM | |
HY23V16202T-100 | HYNIX |
获取价格 |
MASK ROM, 1MX16, 100ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | |
HY23V28100S | HYNIX |
获取价格 |
MASK ROM, 8MX16, 120ns, CMOS, PDSO44, 0.500 INCH, PLASTIC, SOP-44 | |
HY23V28100S-120 | HYNIX |
获取价格 |
MASK ROM, 8MX16, 120ns, CMOS, PDSO44, 0.500 INCH, PLASTIC, SOP-44 |