Datasheet > HY13N50T

HY13N50T

更新时间： 2024-11-26 12:26:11

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
4页	150K
描述
500V / 13A N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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HY13N50T 数据手册

HY13N50T / HY13N50FT

500V / 13A

N-Channel Enhancement Mode MOSFET

500V, R_DS(ON)=0.52W@V_GS=10V, I_D=6.5A

Features

• Low On-State Resistance

TO-220AB

ITO-220AB

• Fast Switching

• Low Gate Charge & Low C_RSS

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charger and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

Mechanical Information

• Case: TO-220AB / ITO-220AB Molded Plastic

Drain

• Terminals : Solderable per MIL-STD-750,Method 2026

Marking & Ordering Information

TYPE

MARKING

PACKAGE

TO-220AB

ITO-220AB

PACKING

50PCS/TUBE

Gate

HY13N50T

HY13N50FT

13N50T

Source

13N50FT

Absolute Maximum Ratings (T_C=25°C unless otherwise specified )

Parameter

Symbol

V_DS

HY13N50T

HY13N50FT

Units

Drain-Source Voltage

Gate-Source Voltage

500

+30

V_GS

I_D

Continuous Drain Current

Pulsed Drain Current ¹⁾

T_C=25℃

I_DM

183

1.47

0.42

Maximum Power Dissipation

Derating Factor

P_D

Avalanche Energy with Single Pulse

I_AS=13A, V_DD=140V, L=7.5mH

E_AS

633

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

℃

Note : 1. Maximum DC current limited by the package

Thermal Characteristics

Parameter

Junction-to-Case Thermal Resistance

Symbol

HY13N50T

HY13N50FT

Units

℃/W

R_qJC

R_qJA

0.68

2.4

110

℃/W

COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE

PAGE.1

REV 1.0, 24-Sept-2012

12 3 4

中文翻译

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