HUM3003R

更新时间： 2024-01-23 02:55:29

品牌	Logo	应用领域
美高森美 - MICROSEMI		PIN二极管开关
页数	文件大小	规格书
2页	274K
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HUM3003R 数据手册

HUM3002/3003/3004

High Voltage, High Power Pin Diode

PRODUCT PREVIEW/PRELIMINARY

KEY FEATURES

DESCRIPTION

These Microsemi PIN diodes are perfect for high power switching

applications where high isolation, low loss, low distortion characteristics, and

high power handling capability are critical. These PIN diodes utilize

Microsemi’s SOGO passivation process for superior stable high voltage

operation. The package is a modified DO-4 structure for ease of mount down

with excellent thermal properties. No thin internal straps are used for

electrical connections. A surge current of 150 amperes at half sine 8.3 ms is

easily handled.

ꢀ Non-magnetic Package For MRI

Application.

ꢀ High Power, High Voltage

Package (4 kV -40 kW)

ꢀ Stable High Voltage Chip

Passivation.

ꢀ High Current Rating.

ꢀ High Surge Current Rating.

ꢀ Low Rs, Low Loss, Low Distortion

Design.

^IMPORTANT:D^FoO^{r t}-^h4^{e mos}P^{t c}I^uN^{rrent data, consult MICROSEMI’s website: http://www.microsemi.com}

DIODE

APPLICATIONS/BENEFITS

ꢀ

MRI Applications.

High Power Antenna Switching.

Band Switching.

Industrial Heating.

Maximum Ratings @ 25ºC

(UNLESS OTHERWISE SPECIFIED)

TYPE

Parameter

S ymb o l

HUM3002

HUM3003

HUM3004

Unit

Reverse Voltage

I_R= 10µA

V_R

2,000

3,000

4,000

Average Power

Dissipation

I_O

P_RF

I_FSM

@ Stud =50°C

RF Power Handling

Capability(CW)

@Zo = 50 OHms

Rs = 0.1 OHM

@ Stud =50°C

Non-Repetitive

Sinusoidal Surge

Current (8.3 ms)

Storage Temperature

Range

150

-55°C to

+150°C

-55°C to

+125

-55°C to

+150°C

-55°C to

+125

-55°C to

+150°C

-55°C to

+125

T_STG

T_OP

°C

Operating Temperature

Range

Thermal resistance

Junction-to Case

1.5

°C/W

R_θ_JC

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ.

0.1

Max

0.2

5.0

Units

Ω

F= 10 MHz, If = 250 mA

F= 1 MHz, 100 V

V_R@ Rated Voltage

If = 10 mA / 100 V

F= 1 MHz, 100 V

If = 0.5 A

Diode Resistance

Capacitance C_T

Reverse Current

Carrier Lifetime

Parallel Resistance

Forward Voltage

R_S

C_T

I_R

4.3

µA

µs

R_P

kΩ

0.75

Microsemi

中文翻译

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