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HUF76429S3ST PDF预览

HUF76429S3ST

更新时间： 2024-11-25 11:11:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
12页 764K
描述
N 沟道，逻辑电平，UltraFET 功率 MOSFET，60V，44A，25mΩ

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中文翻译

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HUF76429S3ST 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：1.33外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：44 A最大漏极电流 (ID)：47 A
最大漏源导通电阻：0.025 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：110 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

HUF76429S3ST 数据手册

 浏览型号HUF76429S3ST的Datasheet PDF文件第2页浏览型号HUF76429S3ST的Datasheet PDF文件第3页浏览型号HUF76429S3ST的Datasheet PDF文件第4页浏览型号HUF76429S3ST的Datasheet PDF文件第5页浏览型号HUF76429S3ST的Datasheet PDF文件第6页浏览型号HUF76429S3ST的Datasheet PDF文件第7页 
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中文翻译

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与HUF76429S3ST相关器件

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HUF76432P3 FAIRCHILD

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 		55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76432P3 INTERSIL

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 		55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76432S3S INTERSIL

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 		55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76432S3S FAIRCHILD

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 		55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76432S3ST ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 56A I(D) | TO-263AB
HUF76437P3 FAIRCHILD

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 		64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76437P3 INTERSIL

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 		64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76437P3T ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 69A I(D) | TO-220AB
HUF76437S3S FAIRCHILD

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 		64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76437S3S INTERSIL

获取价格

 		64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

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