Datasheet > HTZ110A

HTZ110A

更新时间： 2022-11-27 00:19:24

品牌	Logo	应用领域
IXYS		整流二极管高压
页数	文件大小	规格书
2页	207K
描述
High Voltage Diode Rectifier Module

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HTZ110A 数据手册

LARONTROL

HTZ110A Series

I_F(AV)= 3.5 A

V_RRM= 25000 V

High Voltage

Diode Rectifier

Module

Electronic Devices

Minimum

Avalanche

Voltage

V_(BR)R

Repetitive

Peak

Type

Number

HTZ110A25K

HTZ110A22K

HTZ110A19K

HTZ110A16K

25000

22000

19000

16000

27200

24000

20800

17600

CIRCUIT DIAGRAM

-V_RRM-

Centre Tap

CURRENT RATINGS - AIR COOLED

I_F(AV)

Mean forward current

Half wave resistive load T_amb= 35ºC

T_amb= 35ºC

3.5

4.3

I_F

Continuous (direct) forward current

Thermal resistance junction to ambient

R_th(j-a)

2.3 ºC/W

CURRENT RATINGS - OIL COOLED

I_F(AV)

Mean forward current

Half wave resistive load T_oil= 60ºC

T_oil= 60ºC

5.7

7.0

I_T

Continuous (direct) forward current

Thermal resistance junction to oil

R_th(j-o)

0.93 ºC/W

SURGE RATINGS

I²t

I²t for fusing

Surge (non-repetitive) forward current

10 ms half sine T_vj= 150ºC

T_vj= 150ºC

200 A²sec

I_FSM

200

TEMPERATURE AND FREQUENCY RATINGS

T_vj

Virtual junction temperature

Forward (conducting)

Reverse (blocking)

180

ºC

T_stg

Storage temperature range

Frequency range

-40 to 100

20 to 400

CHARACTERISTICS T_case= 25ºC unless otherwise stated

V_FM

I_RM

Forward voltage

At 12 Amps peak

max 18.3

Peak reverse current

At V_RRM; T_case= 150°C

max 0.5 mA

300

Dimensioned Outlines

150

Dimensions shown are maximum in mm

Weight typ.: 1,55 Kg

6.8 DIA

BOTH ENDS

348

368

TAPPED M6, 3 OFF

Issue 1 June 1998

IXYS reserves the right to change limits, test conditions and dimensions.

Distributed by

EUROPE

USA

IXYS Semiconductor GmbH

Lampertheim Germany

Phone: +49.6206.503.0

Fax: +49.6206.503.627

3540 Bassett Street

Santa Clara, CA 95054

Phone: (408) 982-0700

FAX: (408) 496-0670

www.IXYS.com

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