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HTRB20I45CT PDF预览

HTRB20I45CT

更新时间: 2024-11-10 01:18:27
品牌 Logo 应用领域
虹扬 - HY /
页数 文件大小 规格书
4页 310K
描述
SCHOTTKY BARRIER RECTIFIERS

HTRB20I45CT 数据手册

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HTR20I45CT, HTRF20I45CT  
HTRI20I45CT, HTRB20I45CT  
HY ELECTRONIC (CAYMAN) LIMITED  
SCHOTTKY BARRIER RECTIFIERS  
ChipSize  
www.hygroup.com.tw  
Ultra Low VF=0.27V at IF=5A  
REVERSE VOLTAGE  
FORWARD CURRENT  
TO-220AB  
45  
Volts  
20  
Amperes  
87  
I
ITO-220AB  
FEATURES  
Metal of silicon rectifier , majority carrier conduction  
Trench Schottky Technology  
HALOGEN  
FREE  
Low power loss, high efficiency  
High current capability, low VF  
High surge capacity  
RoHS  
COMPLIANT  
Plastic package has UL flammability  
classification 94V-0  
HTR20I45CT  
HTRF20I45CT  
For use in low voltage,high frequency inverters,free  
wheeling,switching power supplies, DC-DC  
TO-263AB  
TO-262AA  
converter,and polarity protection applications  
MECHANICAL DATA  
Case: TO-220AB / ITO-220AB / TO-262AA / TO-263AB  
Polarity: As marked on the body  
Weight: 0.08ounces,2.24 grams  
Mounting position :Any  
HTRB2045CT  
HTRI20I45CT  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
SYMBOL  
HTR20I45CT, HTRF20I45CT, HTRI20I45CT, HTRB20I45CT  
UNIT  
CHARACTERISTICS  
45  
31  
45  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
V
V
V
Maximum DC Blocking Voltage  
20  
10  
Maximum Average Forward Rectified Current ( See Fig.1)  
Maximum Average Forward Rectified Current ( Per Leg )  
Peak Forward Surge Current  
I(AV)  
A
IFSM  
150  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load  
IRRM  
TJ  
1
Peak repetitive reverse current at tp = 2 μs, 1 kHz  
A
-55 to +150  
-55 to +175  
Operating Temperature Range  
Storage Temperature Range  
TSTG  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
Typ  
Max  
-
PARAMETER / CONDITIONS  
SYMBOL  
VBR  
UNIT  
V
45(minimun)  
Breakdown voltage per diode  
Forward Voltage (Note1)  
0.36  
0.27  
0.42  
0.35  
0.38  
0.29  
IF=5A @TJ=25  
IF=5A @TJ=125℃  
IF=10A @TJ=25℃  
IF=10A @TJ=125℃  
VF  
V
0.44  
0.36  
500  
110  
Maximum DC Reverse Current  
at Rated DC Bolcking Voltage  
@TJ=25℃  
uA  
IR  
@TJ=125℃  
mA  
1468  
Typical Junction Capacitance (Note2)  
CJ  
pF  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
Typ  
SYMBOL  
UNIT  
PARAMETER  
HTRF20I45CT  
5.5  
HTRI20I45CT  
3.5  
HTR20I45CT  
3.0  
HTRB2045CT  
3.5  
Thermal Resistance Per Diode (Note3)  
RθJC  
/W  
NOTES:1.300us pulse width,2% duty cycle.  
2.Measured at 1.0 MHZ and applied reverse voltage of 5.0V DC.  
3.Thermal resistance junction to case.  
Rev.1, 1-Mar-2017  

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