Datasheet > HSD32M64D8A-F10

HSD32M64D8A-F10

更新时间： 2024-01-03 17:44:20

品牌	Logo	应用领域
HANBIT		动态存储器
页数	文件大小	规格书
10页	80K
描述
DRAM

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HSD32M64D8A-F10 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

HSD32M64D8A-F10 数据手册

HANBit

HSD32M64D8A

CLK to output in Low-Z

t_SLZ

CLK to output

in Hi-Z

CAS

5.4

latency=3

CAS

t_SHZ

latency=2

Notes :

1. Parameters depend on programmed CAS latency.

2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.

3. Assumed input rise and fall time (tr & tf) = 1ns.

If tr & tf is longer than 1ns, transient time compensation should be considered, ie., [(tr + tf)/2-1]ns should be added to

the parameter.

SIMPLIFIED TRUTH TABLE

CKE

0,1

A10/

A11,A12,

A9~A0

n-1

COMMAND

NOTE

Refresh

Mode register set

Auto refresh

OP code

1,2

Entry

Self

refres

Exit

Bank active & row addr.

Row address

Auto

precharge

Read &

column

address

Column

Address

(A0 ~ A9)

disable

Auto

precharge

4,5

disable

Column

Address

(A0 ~ A9)

Auto

Write &

column

address

disable

Auto

4,5

disable

Burst Stop

Precharg Bank selection

All banks

Entry

Exit

Clock suspend or

active power down

Entry

Precharge power

down mode

Exit

DQM

No operation command

(V=Valid, X=Don't care, H=Logic high, L=Logic

low)

Notes :

1. OP Code : Operand code

A0 ~ A12 & BA0 ~ BA1 : Program keys. (@ MRS)

2. MRS can be issued only at all banks precharge state.

A new command can be issued after 2 CLK cycles of MRS.

URL:www.hbe.co.kr

REV.1.0 (August.2002)

- 8 -

HANBit Electronics Co.,Ltd.

1...5 6 789 10

下载PDF

与HSD32M64D8A-F10相关器件

型号	品牌	描述	获取价格	数据表
HSD32M64D8A-F10L	HANBIT	DRAM	获取价格
HSD32M64D8A-F13	HANBIT	DRAM	获取价格
HSD32M64D8H	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V	获取价格
HSD32M64D8H-10	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V	获取价格
HSD32M64D8H-10L	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V	获取价格
HSD32M64D8H-75	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V	获取价格