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HSD32M64F8R-10L PDF预览

HSD32M64F8R-10L

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
HANBIT 动态存储器
页数 文件大小 规格书
30页 1745K
描述
Synchronous DRAM Module 256Mbyte (32Mx64bit), SMM ,16Mx16, 4Banks, 8K Ref. 3.3V

HSD32M64F8R-10L 数据手册

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HANBit  
HSD32M64F8R  
Synchronous DRAM Module 256Mbyte (32Mx64bit), SMM ,16Mx16,  
4Banks, 8K Ref. 3.3V  
Part No. HSD32M64F8R  
GENERAL DESCRIPTION  
The HSD32M64F8R is a 32M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists  
of eight CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin  
TSSOP package on a 120-pin glass-epoxy. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in  
parallel for each SDRAM. The HSD32M64F8R is a SMM(Stackable Memory Module type) .Synchronous design allows  
precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating  
frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high  
performance memory system applications All module components may be powered from a single 3.3V DC power supply  
and all inputs and outputs are LVTTL-compatible.  
FEATURES  
Part Identification  
HSD32M64F8R-10L : 100MHz (CL=3)  
HSD32M64F8R-10 : 100MHz (CL=2)  
HSD32M64F8R-13 : 133MHz (CL=3)  
Burst mode operation  
Auto & self refresh capability (8K Cycles/64ms)  
LVTTL compatible inputs and outputs  
Single 3.3V ±0.3V power supply  
MRS cycle with address key programs  
- Latency (Access from column address)  
- Burst length (1, 2, 4, 8 & Full page)  
- Data scramble (Sequential & Interleave)  
All inputs are sampled at the positive going edge of the system clock  
The used device is 4M x 16bit x 4Banks SDRAM  
URL:www.hbe.co.kr  
REV.1.0(August.2002).  
- 1 -  
HANBit Electronics Co.,Ltd  

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