Datasheet > HSD32M64D16R

HSD32M64D16R

更新时间： 2022-12-22 22:20:07

品牌	Logo	应用领域
HANBIT		动态存储器
页数	文件大小	规格书
12页	176K
描述
Synchronous DRAM Module 256Mbyte (32Mx64bit), DIMM with based on 16Mx8, 4Banks, 4K Ref., 3.3V

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HSD32M64D16R 数据手册

HANBit

HSD32M64D16R

Synchronous DRAM Module256Mbyte (32Mx64bit), DIMM with based on 16Mx8,

4Banks, 4K Ref., 3.3V

Part No. HSD32M64D16R

GENERAL DESCRIPTION

The HSD32M64D16R is a 32M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists

of sixteen CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin

TSSOP package on a 168-pin glass-epoxy. One 0.22uF and two 0.0022uF decoupling capacitors are mounted on the

printed circuit board in parallel for each SDRAM. The HSD32M72D18AR is a DIMM (Dual in line Memory Module) and is

intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use

of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable

latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system

applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are

LVTTL-compatible.

FEATURES

• Part Identification

HSD32M64D16R : 100MHz (CL=2, CL=3)

HSD32M64D16R : 133MHz (CL=3)

• Burst mode operation

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• The used device is 4M x 8bit x 4Banks SDRAM

URL:www.hbe.co.kr

REV.1.0 (August.2002).

- 1 -

HANBit Electronics Co.,Ltd

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