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HSC276_03

更新时间： 2024-11-16 10:56:19

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HSC276_03 数据手册

HSC276

Silicon Schottky Barrier Diode for Detector and Mixer

REJ03G0134-0200Z

(Previous: ADE-208-421A)

Rev.2.00

Nov.10.2003

Features

•

High forward current, Low capacitance.

Ultra small Flat Package (UFP) is suitable for surface mount design.

Ordering Information

Type No.

Laser Mark

Package Code

UFP

HSC276

Pin Arrangement

Cathode mark

Mark

1. Cathode

2. Anode

Rev.2.00, Nov.10.2003, page 1 of 4

12 3 4 5

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型号	品牌	获取价格	描述	数据表
HSC276A	HITACHI	获取价格	Silicon Schottky Barrier Diode for Mixer
HSC276A	RENESAS	获取价格	Silicon Schottky Barrier Diode for Mixer
HSC276KRF	HITACHI	获取价格	暂无描述
HSC276KRU	HITACHI	获取价格	Mixer Diode, Silicon
HSC276KRV	HITACHI	获取价格	Mixer Diode, Silicon
HSC276KRV	RENESAS	获取价格	暂无描述
HSC276TRU	HITACHI	获取价格	Mixer Diode, Silicon
HSC276TRV	RENESAS	获取价格	SILICON, MIXER DIODE
HSC277	HITACHI	获取价格	Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
HSC277	RENESAS	获取价格	Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch