HSB276AS

更新时间： 2024-09-21 22:33:39

品牌	Logo	应用领域
日立 - HITACHI		肖特基二极管微波混频二极管光电二极管
页数	文件大小	规格书
5页	26K
描述
Silicon Schottky Barrier Diode for Balanced Mixer

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HSB276AS 数据手册

HSB276AS

Silicon Schottky Barrier Diode for Balanced Mixer

ADE-208-838(Z)

Rev. 0

Feb. 2000

Features

•

High forward current, Low capacitance.

HSB276AS which is interconnected in series configuration is designed for balanced mixer use.

CMPAK package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No.

Laser Mark

Package Code

HSB276AS

CMPAK

Outline

(Top View)

Cathode 2

Anode 1

Cathode 1

Anode 2

12 3 4 5

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型号	品牌	获取价格	描述	数据表
HSB276AS-E	RENESAS	获取价格	暂无描述
HSB276AYP	RENESAS	获取价格	Silicon Schottky Barrier Diode for High Speed Switching
HSB276AYP	HITACHI	获取价格	SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
HSB276S	TYSEMI	获取价格	CMPAK package is suitable for high density surface mounting and high speed assembly
HSB276S	RENESAS	获取价格	Silicon Schottky Barrier Diode for Detector and Mixer
HSB276S	KEXIN	获取价格	Silicon Schottky Barrier Diode
HSB276S	HITACHI	获取价格	Silicon Schottky Barrier Diode for Balanced Mixer
HSB278S	RENESAS	获取价格	Silicon Schottky Barrier Diode for Detector
HSB278S	HITACHI	获取价格	Silicon Schottky Barrier Diode for High Speed Switching
HSB278STR	RENESAS	获取价格	Rectifier Diode