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HS9A-65647RH-Q

更新时间： 2024-10-31 22:22:31
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
16页 113K
描述
Radiation Hardened 8K x 8 SOS CMOS Static RAM

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HS9A-65647RH-Q 数据手册

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HS-65647RH  
Radiation Hardened  
8K x 8 SOS CMOS Static RAM  
August 1995  
Features  
Functional Diagram  
• 1.2 Micron Radiation Hardened SOS CMOS  
- Total Dose 3 x 105 RAD (Si)  
- Transient Upset >1 x 1011 RAD (Si)/s  
- Single Event Upset < 1 x 10-12 Errors/Bit-Day  
• Latch-up Free  
AI  
ROW  
DECODER  
128 X 512  
MEMORY ARRAY  
ROW  
I/O0  
• LET Threshold >250 MEV/mg/cm2  
• Low Standby Supply Current 10mA (Max)  
• Low Operating Supply Current 100mA (2MHz)  
• Fast Access Time 50ns (Max), 35ns (Typ)  
• High Output Drive Capability  
INPUT  
DATA  
CIRCUIT  
COLUMN I/O  
COLUMN DECODER  
I/O7  
AI COL  
E2  
• Gated Input Buffers (Gated by E2)  
• Six Transistor Memory Cell  
E1  
G
CONTROL  
CIRCUIT  
• Fully Static Design  
W
• Asynchronous Operation  
• CMOS Inputs  
• 5V Single Power Supply  
• Military Temperature Range -55oC to +125oC  
TRUTH TABLE  
E1  
X
1
E2  
G
X
X
1
W
X
X
1
MODE  
Low Power Standby  
Disabled  
• Industry Standard JEDEC Pinout  
0
1
1
1
1
Description  
The Intersil HS-65647RH is a fully asynchronous 8K x 8  
radiation hardened static RAM. This RAM is fabricated using  
the Intersil 1.2 micron silicon-on-sapphire CMOS technology.  
This technology gives exceptional hardness to all types of  
radiation, including neutron fluence, total ionizing dose, high  
intensity ionizing dose rates, and cosmic rays.  
0
Enabled  
0
0
1
Read  
0
X
0
Write  
Low power operation is provided by a fully static design. Low  
standby power can be achieved without pull-up resistors,  
due to the gated input buffer design.  
Ordering Information  
PART NUMBER  
HS1-65647RH-Q  
TEMPERATURE RANGE  
PACKAGE  
o
o
-55 C to +125 C  
28 Lead SBDIP  
28 Lead SBDIP  
28 Lead SBDIP  
28 Lead SBDIP  
o
o
HS1-65647RH-8  
-55 C to +125 C  
o
o
HS1-65647RH/Proto  
HS1-65647RH/Sample  
HS9-65647RH-Q  
-55 C to +125 C  
o
+25 C  
o
o
-55 C to +125 C  
28 Lead Ceramic Flatpack  
28 Lead Ceramic Flatpack  
28 Lead Ceramic Flatpack  
28 Lead Ceramic Flatpack  
36 Lead Ceramic Flatpack  
o
o
HS9-65647RH-8  
-55 C to +125 C  
o
o
HS9-65647RH/Proto  
HS9-65647RH/Sample  
HS9A-65647RH-Q  
-55 C to +125 C  
o
+25 C  
o
o
-55 C to +125 C  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
Spec Number 518729  
File Number 2928.2  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999824  
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