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HS6464XSJZC PDF预览

HS6464XSJZC

更新时间: 2024-01-25 11:30:35
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
11页 471K
描述
x1 SRAM

HS6464XSJZC 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:DFP, FL36(UNSPEC)Reach Compliance Code:unknown
风险等级:5.88最长访问时间:65 ns
I/O 类型:SEPARATEJESD-30 代码:R-XDFP-F36
JESD-609代码:e0内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:1
端子数量:36字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:64KX1输出特性:3-STATE
封装主体材料:CERAMIC封装代码:DFP
封装等效代码:FL36(UNSPEC)封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified筛选级别:38535V;38534K;883S
最大待机电流:0.0001 A最小待机电流:10 V
子类别:SRAMs标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED总剂量:10M Rad(Si) V
Base Number Matches:1

HS6464XSJZC 数据手册

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