Datasheet > HS649A

HS649A

更新时间： 2024-02-03 17:57:55

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	246K
描述
PNP SILICON TRANSISTOR

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中文翻译

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数据手册

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HS649A 数据手册

PNP S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HS649A

█ APPLICATIONS

Low FrequancyPowerAmplifier.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-126

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation（T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 20W

P_C— — Collector Dissipation（T_A=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1W

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -180V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -160V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -1.5A

1―Emitter，E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

-180

-160

-5

I_C=-1mA, I_E=0

I_C=-10mA, I_B=0

I_E=-1mA, I_C=0

ICBO

Collector Cut-off Current

V_CB=-160V, I_E=0

-10 μA

200

HFE（1） DC Current Gain

V_CE=-5V, I_C=-150mA

V_CE=-5V, I_C=-500mA

I_C=-500mA, I_B=-50mA

V_CE=-5V, I_C=-150mA

V_CE=-5V, I_C=-150mA,

HFE（2） DC Current Gain

VCE(sat) Collector- Emitter Saturation Voltage

-1

VBE

Base-Emitter Voltage

-1.5

Current Gain-Bandwidth Product

Output Capacitance

140

MHz

Cob

pF V_CB=-10V, I_E=0，f=1MHz

█ hFE Classification

60— 120

100— 200

中文翻译

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