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HPP800R300PD-G PDF预览

HPP800R300PD-G

更新时间: 2024-11-10 15:19:39
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 459K
描述
TO-220

HPP800R300PD-G 数据手册

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R
Silicon N-Channel Power MOSFET  
HPP800R300PD-G  
General Description  
VDSS(Tjmax)  
ID  
850  
17  
V
A
HPP800R300PD-G, the silicon N-channel Enhanced  
MOSFETs, is obtained by the super junction technology which  
reduces the conduction loss, improve switching performance and  
enhance the avalanche energy. The transistor can be used in  
various power switching circuit for system miniaturization and  
higher efficiency. The package type is TO-220 which accords  
with the RoHS standard.  
PD(TC=25)  
RDS(ON)Typ  
Eoss@400V  
208  
0.26  
3.5  
W
uJ  
Features  
l Fast Switching  
l Low Gate Charge  
l Low Reverse transfer capacitances  
l 100% Single Pulse avalanche energy Test  
l Halogen Free  
l Zener-Protected  
Applications:  
Power switch circuit of adaptor, charger and LED.  
AbsoluteTj= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage(VGS=0V)  
Continuous Drain Current TC = 25 °C  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
800  
17  
V
A
a1  
ID  
a2  
51  
A
IDM  
VGSS  
±30  
V
a3  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
520  
mJ  
V/ns  
V/ns  
A/us  
W
EAS  
a4  
15  
dv/dt  
MOSFET dv/dt ruggedness  
dv/dt  
dif/dt  
PD  
50  
Maximum diode communication speed  
Power Dissipation(TC=25°C)  
500  
208  
VESD(G-S)  
TJTstg  
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)  
Operating and Storage Temperature Range  
3000  
55+150  
V
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.  
Page 1 of 10  
2021V01  

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