Datasheet > HO-P-410E

HO-P-410E

更新时间： 2024-10-29 00:07:47

品牌	Logo	应用领域
莱姆 - LEM		/
页数	文件大小	规格书
15页	1338K
描述
Current Transducer

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HO-P-410E 数据手册

HO 60 .. 250-P series

Electrical data HO 180-P-0100

At T_A= 25 °C, U_C= +5 V, R_L= 10 kΩ unless otherwise noted (see Min, Max, typ. deﬁnition paragraph in page 13).

Parameter

Primary nominal rms current

Primary current, measuring range

Number of primary turns

Supply voltage ¹⁾

Symbol

I_PN

Unit

Min

−450

4.5

Typ

Max

Comment

180

450

@ U_C≥ 4.6 V

I_PM

N_P

See application information

U_C

5.5

Current consumption

I_C

2.5

Reference voltage (output)

Reference voltage (input)

Output voltage range @ I_PM

V_refoutput resistance

V_ref

2.48

0.5

2.52

2.65

Internal reference

External reference

Over operating temperature range

Series

V_ref

V_out− V_ref

R_ref

−2

130

200

300

V_outoutput resistance

R_out

Series

Allowed capacitive load

C_L

Open drain, active low

Over operating temperature range

OCD output: On resistance

OCD output: Hold time

R_on

t_hold

150

Additional time after threshold has

released

0.7

1.4

V_outforced to GND when EEPROM

EEPROM control

V_out

V_OE

I_OE

in an error state ²⁾

Electrical offset voltage @ I_P= 0 A

−5

V_out− V_ref@ V_ref= 2.5 V

Electrical offset current

Referred to primary

−1.13

1.13

Temperature coefﬁcient of V_ref

Temperature coefﬁcient of V_OE

TCV_ref

TCV_OE

ppm/K

mV/K

−170

170

−40 °C … 105 °C

−0.075

0.075

Offset drift referred to primary

@ I_P= 0 A

TCI_OE

G_th

mA/K

mV/A

−16.9

16.9

−40 °C … 105 °C

Theoretical sensitivity

4.444

800 mV @ I_PN

Factory adjustment

(straight bus-bar)

Sensitivity error @ I_PN

ε_G

−0.5

0.5

Temperature coefﬁcient of G

Linearity error 0 … I_PN

Linearity error 0 … I_PM

TCG

ε_L

ppm/K

% of I_PN

% of I_PM

−350

−0.5

350

0.5

−40 °C … 105 °C

ε_L

Magnetic offset current (@ 10 × I_PN

referred to primary

)

I_OM

−0.92

0.92

One turn

Reaction time @ 10 % of I_PN

Response time @ 90 % of I_PN

Frequency bandwidth (−3 dB)

t_ra

t_r

µs

2.5

3.5

@ 50 A/µs

Small signals

kHz

100

Output rms voltage noise (spectral

density)

e_no

µV/√

(100 Hz … 100 kHz)

Output voltage noise

(DC … 10 kHz)

(DC … 100 kHz)

(DC … 1 MHz)

2.7

5.4

10.8

V_no

mVpp

Over-current detect

Peak value ±10 %

2.64 × I_PN2.93 × I_PN3.22 × I_PN

Accuracy @ I_PN

% of I_PN

−1

Accuracy @ I_PN@ T_A= +105 °C

Accuracy @ I_PN@ T_A= +85 °C

−4.55

−3.66

4.55

3.66

See formula note ³⁾

Notes: ¹⁾3.3 V SP version available

²⁾EEPROM in an error state makes the transducer behave like a reverse current saturation. Use of the OCD may help to

differentiate the two cases

TCI_OE

³⁾Accuracy @

(% of I_PN)

= X

TCG

10000

X_TA

(T – 25) +

× 100 × (T – 25)).

+ (

× I

1000

Page 7/15

16July2015/Version 5

LEM reserves the right to carry out modiﬁcations on its transducers, in order to improve them, without prior notice

www.lem.com

1...4 5 678 9 10...15

中文翻译

下载PDF

与HO-P-410E相关器件

型号	品牌	获取价格	描述	数据表
HO-P-410F	LEM	获取价格	Current Transducer
HO-P-410G	LEM	获取价格	Current Transducer
HO-P-410H	LEM	获取价格	Current Transducer
HO-P-4110	LEM	获取价格	Current Transducer
HO-P-4111	LEM	获取价格	Current Transducer
HO-P-4112	LEM	获取价格	Current Transducer
HO-P-4113	LEM	获取价格	Current Transducer
HO-P-4114	LEM	获取价格	Current Transducer
HO-P-4115	LEM	获取价格	Current Transducer
HO-P-4116	LEM	获取价格	Current Transducer

与HO-P-410E相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

12
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

12
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

39
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

46

产品中心

服务支持

精选活动

关于我们

帮助中心

HO-P-410E

HO-P-410E 数据手册

与HO-P-410E相关器件

与HO-P-410E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HO-P-410E

HO-P-410E 数据手册

与HO-P-410E相关器件

与HO-P-410E相关文章

您还可以找

您在本页遇到什么问题？