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HN27C4000G-10 PDF预览

HN27C4000G-10

更新时间: 2024-02-23 01:51:15
品牌 Logo 应用领域
日立 - HITACHI 存储可编程只读存储器
页数 文件大小 规格书
20页 125K
描述
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM

HN27C4000G-10 技术参数

生命周期:Transferred零件包装代码:DIP
包装说明:WDIP,针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.61风险等级:5.63
最长访问时间:100 ns其他特性:CONFIGURABLE AS 256 X 16
JESD-30 代码:R-GDIP-T40长度:52.07 mm
内存密度:4194304 bit内存集成电路类型:UVPROM
内存宽度:8功能数量:1
端子数量:40字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8封装主体材料:CERAMIC, GLASS-SEALED
封装代码:WDIP封装形状:RECTANGULAR
封装形式:IN-LINE, WINDOW并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:6.3 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL宽度:15.24 mm
Base Number Matches:1

HN27C4000G-10 数据手册

 浏览型号HN27C4000G-10的Datasheet PDF文件第2页浏览型号HN27C4000G-10的Datasheet PDF文件第3页浏览型号HN27C4000G-10的Datasheet PDF文件第4页浏览型号HN27C4000G-10的Datasheet PDF文件第5页浏览型号HN27C4000G-10的Datasheet PDF文件第6页浏览型号HN27C4000G-10的Datasheet PDF文件第7页 
ADE-203-311A (Z)  
HN27C4000G Series  
524288-Word × 8-Bit/262144-Word × 16-Bit  
CMOS UV Erasable and Programmable ROM  
Rev. 1  
Nov. 10, 1994  
The Hitachi HN27C4000 is a 4-Mbit UV erasable  
and electrically programmable ROM that is  
organized either as 524288-word × 8 bit or as  
262144-word × 16 bit, featuring extra-high speed  
burst mode that gives two times faster 4-word or 8-  
byte serial access than normal. And also high  
speed and fast programming are served as well as  
the existing Hitachi 4M device HN27C4096 and  
HN27C4001. Fabricated on advanced fine process  
and high speed circuitry technique, HN27C4000  
makes high speed access time and low power  
dissipation in either active or stand-by mode.  
Therefore, it is suitable for all systems featuring  
high speed microprocessor such as the 80386,  
80486, 68030, 68040 and so on.  
Features  
• Organization: 524288-word × 8-bit/262144-  
word × 16-bit (BYTE/V enables  
PP  
selection byte-wide or word-wide)  
• High speed: Access time 100 ns/120 ns/150 ns  
(max)  
Burst access time 50 ns/60 ns/60 ns  
(max)  
• Low power dissipation:  
Standby mode; 5 µW (typ),  
Active mode; 150 mW/MHz (typ)  
• Fast high reliability page programming, fast  
high-reliability programming and option  
programming: Program voltage; +12.5 V DC  
Program time; 3.5 sec (min)  
(Theoretical in Page  
programming)  
• Inputs and outputs TTL compatible during both  
read and program modes  
• Pin arrangement: 40-pin EIAJ standard pin  
compatible with HN62414/  
HN62434  
• Device identifier mode: Manufacturer code and  
device code  

HN27C4000G-10 替代型号

型号 品牌 替代类型 描述 数据表
HN27C4000G-12 HITACHI

完全替代

524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
HN27C4096AHG-85 RENESAS

功能相似

256KX16 UVPROM, 85ns, CDIP40, 0.600 INCH, CERDIP-40
M27V402-150F6TR STMICROELECTRONICS

功能相似

4 Mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM

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