Datasheet > HMU1360M-3R1

HMU1360M-3R1

更新时间： 2024-02-27 07:34:38

品牌	Logo	应用领域
台达 - DELTA		电感器测试功率感应器
页数	文件大小	规格书
1页	210K
描述
SMT Power Inductor

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技术参数
数据手册

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HMU1360M-3R1 技术参数

生命周期：	Active	包装说明：	5050-24
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8504.50.80.00	风险等级：	5.7
Is Samacsys：	N	大小写代码：	5050-24
直流电阻：	0.008 Ω	标称电感 (L)：	3.1 µH
电感器应用：	POWER INDUCTOR	电感器类型：	GENERAL PURPOSE INDUCTOR
功能数量：	1	端子数量：	3
形状/尺寸说明：	RECTANGULAR PACKAGE	屏蔽：	YES
表面贴装：	YES	端子形状：	WRAPAROUND
测试频率：	0.1 MHz	容差：	20%
Base Number Matches：	1

HMU1360M-3R1 数据手册

SMT Power Inductor

HMU1345, 1350, 1356, 1358, 1360M & 1362M Typ e

Features

RoHS compliant.

Low profile, SMD type.

High current.

Magnetic shielded.

High energy storage and low DCR.

Provided with embossed carrier tape packing.

Ideal for power source circuits, DC-DC converter, DC-AC inverters

inductor applications.

In addition to the standard versions shown here, customized inductors

are available to meet your exact requirements.

Mechanical Dimens ion :

RECOMMENDED PAD PATTERNS

8.4

UNIT : mm/inch

A = 12.60 0.4 / 0.496 0.016

B = 12.70 0.3 / 0.500 0.012

D = 8.95 / 0.352

3.0

3.8

10.0

E = 2.50 / 0.098

F = 9.50 / 0.374

G = 4.30 / 0.169

H = 1.90 / 0.075

¡ Ó

13.5

^OC

Electrical Characteris tics : 25 , 100KHz, 1V

DCR

(m ) MAX

Is a t

(Adc)

Irm s

(Adc)

HEIGHT "C"

(mm/inch) MAX.

(uH)

(uH) MIN.

HMU1345-3R2

HMU1345-5R6

HMU1350-1R4

HMU1350-1R6

HMU1350-4R0

HMU1356-0R4

HMU1356-0R6

HMU1356-0R6HS

HMU1356-0R8

HMU1356-1R0LD

HMU1356-1R4

HMU1356-4R4

HMU1356-4R7HS

HMU1358-4R7

HMU1360M-3R1

HMU1362M-5R2

3.2

5.6

1.4

1.6

4.0

0.4

0.6

0.8

1.0

1.4

4.4

4.7

3.1

5.2

2.56

4.50

1.12

1.28

3.20

0.32

0.48

0.64

0.80

1.12

3.52

3.76

2.48

4.16

9.0

14.5

3.7

1.1

1.9

3.8

8.0

11.4

7.5

8.0

9.2

5.8

9.5

8.0

4.5 / 0.177

5.0 / 0.197

5.6 / 0.220

5.8 / 0.228

6.0 / 0.236

6.2 / 0.244

16.0

15.0

7.0

14.0

14.0.

26.0

20.0

14.5

10.0

8.2

40.0

34.5

31.0

25.0

15.5

12.5

10.5

9.0

10.0

9.5

14.0

11.0

1. Tolerance of inductance is 20%.

2. Isat is the DC current which cause the inductance drop to Li.

3. Irms is the DC current which cause the surface temperature of the part increase less than 45 C.

4. Operating temperature : -20 C to 105 C ( including self-temperature rise ).

DELTA ELECTRONICS, INC.

(TAOYUAN PLANT CPBG)

252, SAN YING ROAD, KUEISAN INDUSTRIAL ZONE, TAOYUAN SHIEN, 333, TAIWAN, R.O.C.

TEL: 886-3-3591968; FAX: 886-3-3591991

http://www.deltaww.com

139

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