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HMT41GS6AFR8C-RD PDF预览

HMT41GS6AFR8C-RD

更新时间: 2024-11-09 12:04:07
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器双倍数据速率
页数 文件大小 规格书
55页 1122K
描述
DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb A-die

HMT41GS6AFR8C-RD 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SODIMM包装说明:DIMM, DIMM204,24
针数:204Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.72访问模式:DUAL BANK PAGE BURST
最长访问时间:0.195 ns其他特性:AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
最大时钟频率 (fCLK):933 MHzI/O 类型:COMMON
JESD-30 代码:R-XZMA-N204长度:67.6 mm
内存密度:68719476736 bit内存集成电路类型:DDR DRAM MODULE
内存宽度:64功能数量:1
端口数量:1端子数量:204
字数:1073741824 words字数代码:1000000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:1GX64
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM204,24
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.5 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:30 mm自我刷新:YES
子类别:DRAMs最大压摆率:1.536 mA
最大供电电压 (Vsup):1.575 V最小供电电压 (Vsup):1.425 V
标称供电电压 (Vsup):1.5 V表面贴装:NO
技术:CMOS温度等级:OTHER
端子形式:NO LEAD端子节距:0.6 mm
端子位置:ZIG-ZAG处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.5 mm

HMT41GS6AFR8C-RD 数据手册

 浏览型号HMT41GS6AFR8C-RD的Datasheet PDF文件第2页浏览型号HMT41GS6AFR8C-RD的Datasheet PDF文件第3页浏览型号HMT41GS6AFR8C-RD的Datasheet PDF文件第4页浏览型号HMT41GS6AFR8C-RD的Datasheet PDF文件第5页浏览型号HMT41GS6AFR8C-RD的Datasheet PDF文件第6页浏览型号HMT41GS6AFR8C-RD的Datasheet PDF文件第7页 
204pin DDR3 SDRAM SODIMM  
DDR3 SDRAM  
Unbuffered SODIMMs  
Based on 4Gb A-die  
HMT425S6AFR6C  
HMT451S6AFR6C  
HMT451S6AFR8C  
HMT41GS6AFR8C  
*SK hynix reserves the right to change products or specifications without notice.  
Rev. 1.0 / Jul. 2013  
1

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