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HMS7N65K PDF预览

HMS7N65K

更新时间: 2024-02-11 12:58:27
品牌 Logo 应用领域
华之美 - HMSEMI /
页数 文件大小 规格书
7页 490K
描述
N-Channel Super Junction Power MOSFET Ⅲ

HMS7N65K 数据手册

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HMS7N65I/HMS7N65K  
N-Channel Super Junction Power MOSFET Ⅲ  
General Description  
The series of devices use advanced trench gate super  
junction technology and design to provide excellent RDS(ON)  
with low gate charge. This super junction MOSFET fits the  
industry’s AC-DC SMPS requirements for PFC, AC/DC  
power conversion, and industrial power applications.  
VDS  
650  
600  
7
V
mΩ  
A
RDS(ON)TYP  
ID  
Features  
New technology for high voltage device  
Low on-resistance and low conduction losses  
Small package  
Ultra Low Gate Charge cause lower driving requirements  
100% Avalanche Tested  
ROHS compliant  
Application  
Power factor correctionPFC)  
Switched mode power supplies(SMPS)  
Uninterruptible Power SupplyUPS)  
Schematic diagram  
Package Marking And Ordering Information  
Device  
Device Package  
Marking  
HMS7N65I  
HMS7N65K  
HMS7N65I  
HMS7N65K  
TO-251  
TO-252  
TO-251  
TO-252  
Table 1. Absolute Maximum Ratings (TC=25)  
Parameter  
Symbol  
VDS  
Value  
Unit  
V
650  
±30  
7
Drain-Source Voltage (VGS=0V)  
V
Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)  
Continuous Drain Current at Tc=25°C  
Continuous Drain Current at Tc=100°C  
VGS  
A
ID (DC)  
ID (DC)  
IDM (pluse)  
PD  
4.5  
28  
A
(Note 1)  
A
Pulsed drain current  
Maximum Power Dissipation(Tc=25)  
60  
W
Derate above 25°C  
0.48  
101  
1.5  
W/°C  
mJ  
A
(Note2)  
EAS  
IAR  
Single pulse avalanche energy  
(Note 1)  
Avalanche current  
Repetitive Avalanche energy tAR limited by Tjmax  
(Note 1)  
0.28  
EAR  
mJ  
1

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