Datasheet > HMC998LP5ETR

HMC998LP5ETR

更新时间： 2024-02-21 01:23:55

品牌	Logo	应用领域
HITTITE		射频微波
页数	文件大小	规格书
10页	741K
描述
Wide Band Medium Power Amplifier, 100MHz Min, 20000MHz Max, 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-32

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技术参数
数据手册

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HMC998LP5ETR 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.83	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	9 dB
最大输入功率 (CW)：	27 dBm	最大工作频率：	20000 MHz
最小工作频率：	100 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND MEDIUM POWER
Base Number Matches：	1

HMC998LP5ETR 数据手册

HMC998LP5E

v00.0612

GaAs pHEMT MMIC

2 WATT POWER AMPLIFIER, 0.1 - 20 GHz

Pin Descriptions

Pin Number

fuꢈctꢇꢁꢈ

Dꢃꢆcꢄꢇꢀtꢇꢁꢈ

iꢈtꢃꢄꢊacꢃ schꢃꢅatꢇc

1, 4, 6, 14, 20,

22,

These pins and package bottom must be connected to

GnD

rf/DC gꢄꢁuꢈd.

Gate control for ampliﬁer. Attach bypass capacitor per

aꢀꢀꢉꢇcatꢇꢁꢈ cꢇꢄcuꢇt hꢃꢄꢃꢇꢈ. fꢁꢄ ꢈꢁꢅꢇꢈaꢉ ꢁꢀꢀꢃꢄatꢇꢁꢈ +9.5V

should be applied to Vgg2.

Vgg2

3, 7, 8, 9, 10,

11, 12, 17, 18,

19, 23, 24, 25,

26, 27, 28, 31,

These pins are not connected internally, however all data

ꢆhꢁꢂꢈ hꢃꢄꢃꢇꢈ ꢂaꢆ ꢅꢃaꢆuꢄꢃd ꢂꢇth thꢃꢆꢃ ꢀꢇꢈꢆ cꢁꢈꢈꢃctꢃd

tꢁ rf/DC gꢄꢁuꢈd ꢃxtꢃꢄꢈaꢉꢉy.

n/C

rfin

Vgg1

Thꢇꢆ ꢀad ꢇꢆ DC cꢁuꢀꢉꢃd aꢈd ꢅatchꢃd tꢁ 50 ohꢅꢆ. Bꢉꢁck-

ꢇꢈg caꢀacꢇtꢁꢄ ꢇꢆ ꢄꢃquꢇꢄꢃd.

Gate control 1 for ampliﬁer. Attach bypass capacitor per

aꢀꢀꢉꢇcatꢇꢁꢈ cꢇꢄcuꢇt hꢃꢄꢃꢇꢈ. pꢉꢃaꢆꢃ ꢊꢁꢉꢉꢁꢂ “mmiC Bꢇaꢆꢇꢈg

pꢄꢁcꢃduꢄꢃ” aꢀꢀꢉꢇcatꢇꢁꢈ ꢈꢁtꢃ.

Low frequency termination. Attach bypass capacitor per

15, 29

ACG4, ACG2

aꢀꢀꢉꢇcatꢇꢁꢈ cꢇꢄcuꢇt.

RF output for ampliﬁer. Connect DC bias (Vdd) network

tꢁ ꢀꢄꢁvꢇdꢃ dꢄaꢇꢈ cuꢄꢄꢃꢈt (idd). sꢃꢃ aꢀꢀꢉꢇcatꢇꢁꢈ cꢇꢄcuꢇt

hꢃꢄꢃꢇꢈ.

rfoUT & VDD

Low frequency termination. Attach bypass capacitor per

ACG1

aꢀꢀꢉꢇcatꢇꢁꢈ cꢇꢄcuꢇt hꢃꢄꢃꢇꢈ.

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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