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HMC999 PDF预览

HMC999

更新时间: 2024-11-21 07:18:07
品牌 Logo 应用领域
HITTITE 放大器功率放大器
页数 文件大小 规格书
10页 616K
描述
GaN MMIC 10 WATT POWER AMPLIFIER

HMC999 数据手册

 浏览型号HMC999的Datasheet PDF文件第2页浏览型号HMC999的Datasheet PDF文件第3页浏览型号HMC999的Datasheet PDF文件第4页浏览型号HMC999的Datasheet PDF文件第5页浏览型号HMC999的Datasheet PDF文件第6页浏览型号HMC999的Datasheet PDF文件第7页 
HMC999  
v01.0112  
GaN MMIC 10 WATT POWER AMPLIFIER,  
0.01 - 10 GHz  
Typical Applications  
Features  
Tꢀꢁ hmC999 ꢂꢃ ꢂdꢁaꢉ ꢋꢅꢄ:  
• Test Instrumentation  
• Military Communications  
• Jammers and Decoys  
• Radar, EW & ECM Subsystems  
• Space  
hꢂgꢀ p1dB outꢈut pꢅꢆꢁꢄ: 38 dBꢇ  
hꢂgꢀ pꢃat outꢈut pꢅꢆꢁꢄ: 40 dBꢇ  
hꢂgꢀ outꢈut ip3: 47 dBꢇ  
hꢂgꢀ Gaꢂꢊ: 11 dB  
suꢈꢈꢉy Vꢅꢉtagꢁ: +28V, +40V ꢅꢄ +48V @ 1100 ꢇA  
50 oꢀꢇ matcꢀꢁd iꢊꢈut/outꢈut  
Dꢂꢁ sꢂzꢁ: 3.66 x 1.91 x 0.1 ꢇꢇ  
Functional Diagram  
General Description  
Tꢀꢁ hmC999 ꢂꢃ a Gan hemT mmiC Dꢂꢃtꢄꢂbutꢁd  
pꢅꢆꢁꢄ Aꢇꢈꢉꢂfiꢁꢄ ꢆꢀꢂcꢀ ꢅꢈꢁꢄatꢁꢃ bꢁtꢆꢁꢁꢊ 0.01 aꢊd 10  
Ghz. Tꢀꢁ aꢇꢈꢉꢂfiꢁꢄ ꢈꢄꢅvꢂdꢁꢃ 11 dB ꢅꢋ gaꢂꢊ, 47 dBꢇ  
ꢅutꢈut ip3 aꢊd 38 dBꢇ ꢅꢋ ꢅutꢈut ꢈꢅꢆꢁꢄ at 1 dB gaꢂꢊ  
cꢅꢇꢈꢄꢁꢃꢃꢂꢅꢊ ꢆꢀꢂꢉꢁ ꢄꢁquꢂꢄꢂꢊg 1100 ꢇA ꢋꢄꢅꢇ a +48 V  
ꢃuꢈꢈꢉy. Tꢀꢁ hmC999 aꢇꢈꢉꢂfiꢁꢄ ꢈꢄꢅvꢂdꢁꢃ 10 wattꢃ ꢅꢋ  
ꢃatuꢄatꢁd ꢈꢅꢆꢁꢄ ꢂꢊ a cꢀꢂꢈ aꢄꢁa ꢅꢊꢉy 7 ꢇꢇ2, ꢁquatꢂꢊg  
tꢅ a ꢈꢅꢆꢁꢄ dꢁꢊꢃꢂty ꢅꢋ 1.5 w/ꢇꢇ2 ꢅvꢁꢄ 3 dꢁcadꢁꢃ ꢅꢋ  
baꢊdꢆꢂdtꢀ. Aꢉꢉ data ꢂꢃ takꢁꢊ ꢆꢂtꢀ tꢀꢁ cꢀꢂꢈ cꢅꢊꢊꢁctꢁd  
vꢂa tꢆꢅ 0.025 ꢇꢇ (1 ꢇꢂꢉ) ꢆꢂꢄꢁ bꢅꢊdꢃ ꢅꢋ ꢇꢂꢊꢂꢇaꢉ ꢉꢁꢊgtꢀ  
0.31 ꢇꢇ (12 ꢇꢂꢉꢃ).  
Electrical Specifications, TA = +25°C [2], Vdd = +48 V, Vgg2 = +22 V, Idd = 1100 mA* [1]  
paꢄaꢇꢁtꢁꢄ  
fꢄꢁquꢁꢊcy raꢊgꢁ  
mꢂꢊ.  
Tyꢈ.  
0.01 - 2  
12.5  
0.8  
max.  
mꢂꢊ.  
Tyꢈ.  
2 - 6  
11  
max.  
mꢂꢊ.  
Tyꢈ.  
6 - 10  
10.5  
0.7  
max.  
Uꢊꢂtꢃ  
Ghz  
dB  
Gaꢂꢊ  
10.5  
9
8.5  
Gaꢂꢊ fꢉatꢊꢁꢃꢃ  
0.4  
0.02  
18  
dB  
Gaꢂꢊ Vaꢄꢂatꢂꢅꢊ ovꢁꢄ Tꢁꢇꢈꢁꢄatuꢄꢁ  
iꢊꢈut rꢁtuꢄꢊ lꢅꢃꢃ  
0.017  
20  
0.025  
15  
dB/ °C  
dB  
outꢈut rꢁtuꢄꢊ lꢅꢃꢃ  
13  
15  
14  
dB  
outꢈut pꢅꢆꢁꢄ ꢋꢅꢄ 1 dB Cꢅꢇꢈꢄꢁꢃꢃꢂꢅꢊ (p1dB)  
satuꢄatꢁd outꢈut pꢅꢆꢁꢄ (pꢃat)  
outꢈut Tꢀꢂꢄd oꢄdꢁꢄ iꢊtꢁꢄcꢁꢈt (ip3)  
36.5  
38.5  
40.5  
48  
36  
38  
34.5  
36.5  
39.5  
45.5  
dBꢇ  
dBꢇ  
dBꢇ  
40  
47  
suꢈꢈꢉy Cuꢄꢄꢁꢊt  
(idd) (Vdd = 48V, Vgg = 22V Tyꢈ.)  
1100  
1100  
1100  
ꢇA  
* Adjust Vgg1 between -5 to 0 V to achieve Idd = 1100 mA typical.  
[1] S parameter and OIP3 data taken at Idd=1000mA  
[2] Probe station chuck temperature adjusted to bring backside of die to +25°C  
Products and Product Information are Subject to Change Without Notice.  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
1

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