Datasheet > HMC8401_18

HMC8401_18

更新时间： 2022-02-26 12:50:11

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
17页	361K
描述
Low Noise Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HMC8401_18 数据手册

HMC8401

Data Sheet

Wire Bonding

Create ball bonds with a force of 40 g to 50 g and wedge bonds

with a force of 18 g to 22 g. Create all bonds with a nominal stage

temperature of 150°C. Apply a minimum amount of ultrasonic

energy to achieve reliable bonds. Keep all bonds as short as

possible, less than 12 mil (0.31 mm).

RF bonds made with 0.003 in. × 0.0005 in. gold ribbon are recom-

mended for the RF ports. These bonds must be thermosonically

bonded with a force of 40 g to 60 g. DC bonds of 1 mil (0.025 mm)

diameter, thermosonically bonded, are recommended.

TYPICAL APPLICATION CIRCUIT

4.7µF

0.1µF

100pF

4.7µF

0.1µF

100pF

RFOUT

RFIN

100pF

0.1µF

100pF

4.7µF

0.1µF

Figure 44. Typical Application Circuit

ASSEMBLY DIAGRAM

–

ALL BOND WIRES ARE

1mil DIAMETER

–

4.7µF

TO V SUPPLY

0.1µF

3mil NOMINAL GAP

100pF

TO V 2 SUPPLY

0.1µF

100pF

50Ω

TRANSMISSION

LINE

100pF

TO V 1 SUPPLY

0.1µF

4.7µF

–

Figure 45. Assembly Diagram

Rev. B | Page 16 of 17

1...13 14 151617

中文翻译

下载PDF

与HMC8401_18相关器件

型号	品牌	描述	获取价格	数据表
HMC8401-Die	ADI	DC至28 GHz，GaAs pHEMT MMIC低噪声放大器	获取价格
HMC8401-SX	ADI	HMC8401-SX	获取价格
HMC8402	ADI	Low Noise Amplifier	获取价格
HMC8402-Die	ADI	2 GHz至30 GHz，GaAs、pHEMT、MMIC、低噪声放大器	获取价格
HMC8402-SX	ADI	Low Noise Amplifier	获取价格
HMC840LP6CE	ADI	Fractional-N PLL with Integrated VCO SMT, 1.31 - 5.66 GHz	获取价格