Datasheet > HMC754S8GE

HMC754S8GE

更新时间： 2024-02-05 16:55:43

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
11页	885K
描述
GaAs HBT High Linearity Push-Pull Amplifier, 75 Ohm, DC - 1 GHz

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技术参数
数据手册

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HMC754S8GE 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Lifetime Buy	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.31.00.01	风险等级：	7.52
特性阻抗：	75 Ω	构造：	COMPONENT
增益：	12.1 dB	最大输入功率 (CW)：	10 dBm
JESD-609代码：	e3	最大工作频率：	1000 MHz
最小工作频率：		最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

HMC754S8GE 数据手册

HMC754* PRODUCT PAGE QUICK LINKS

Last Content Update: 02/23/2017

COMPARABLE PARTS

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DESIGN RESOURCES

• HMC754 Material Declaration

• PCN-PDN Information

EVALUATION KITS

• HMC754S8GE Evaluation Board

• Quality And Reliability

• Symbols and Footprints

DOCUMENTATION

Application Notes

DISCUSSIONS

View all HMC754 EngineerZone Discussions.

• AN-1363: Meeting Biasing Requirements of Externally

Biased RF/Microwave Amplifiers with Active Bias

Controllers

SAMPLE AND BUY

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• Broadband Biasing of Amplifiers General Application Note

• MMIC Amplifier Biasing Procedure Application Note

TECHNICAL SUPPORT

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number.

• Thermal Management for Surface Mount Components

General Application Note

Data Sheet

• HMC754 Data Sheet

DOCUMENT FEEDBACK

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REFERENCE MATERIALS

Quality Documentation

• HMC Legacy PCN: S## and S##E packages - Relocation of

pre-existing production equipment to new building

• Package/Assembly Qualification Test Report: Plastic

Encapsulated SOIC (QTR: 02018 REV: 01)

• Semiconductor Qualification Test Report: GaAs HBT-E

(QTR: 2013-00271)

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与HMC754S8GE相关器件

型号	品牌	描述	获取价格	数据表
HMC754S8GE_10	HITTITE	GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz	获取价格
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HMC754S8GETR	HITTITE	Wide Band Low Power Amplifier,	获取价格
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HMC755LP4E	HITTITE	GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz	获取价格