Datasheet > HMC754S8GE

HMC754S8GE

更新时间： 2024-01-31 02:38:48

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
11页	885K
描述
GaAs HBT High Linearity Push-Pull Amplifier, 75 Ohm, DC - 1 GHz

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技术参数
数据手册

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HMC754S8GE 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Lifetime Buy	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.31.00.01	风险等级：	7.52
特性阻抗：	75 Ω	构造：	COMPONENT
增益：	12.1 dB	最大输入功率 (CW)：	10 dBm
JESD-609代码：	e3	最大工作频率：	1000 MHz
最小工作频率：		最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

HMC754S8GE 数据手册

HMC754S8GE

ꢋ00.0409

GaAs HBT HIGH LINEARITY

PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz

Option 2 - 10 to 100 MHz Application

Gain & Return Loss

Output IP3 vs. Frequency

S21

S11

S22

-10

-20

-30

-40

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

FREQUENCY (GHz)

90 100

FREQUENCY (MHz)

Noise Figure vs. Frequency

P1dB vs. Frequency

90 100

FREQUENCY (MHz)

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

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_{license is granted by implic}P_ah_tioo_nn_ore_o:_th9_er7_w8_ise-2_un5_d0_er-_a3_n3_{y p}4_a3_{tent or}F_paa_tex_n:_{t r}9_ig7_ht8_s-_o2_{f A}5_n0_alo-_g3_D3_e7_vi3_ces.Order On-line at www.hittite.com

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