Datasheet > HMC758LP3ERTR

HMC758LP3ERTR

更新时间： 2024-01-12 05:19:23

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
8页	397K
描述
HMC758LP3ERTR

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技术参数
数据手册

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HMC758LP3ERTR 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.17
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	18 dB	最大输入功率 (CW)：	5 dBm
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	16	最大工作频率：	2200 MHz
最小工作频率：	700 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	LCC16,.12SQ,20	电源：	3/5 V
射频/微波设备类型：	WIDE BAND LOW POWER	最大压摆率：	260 mA
表面贴装：	YES	技术：	GAAS
Base Number Matches：	1

HMC758LP3ERTR 数据手册

HMC758LP3 / 758LP3E

v00.1108

GaAs SMT PHEMT LOW NOISE

AMPLIFIER, 700 - 2200 MHz

Features

Noise Figure: 1.7 dB

Typical Applications

The HMC758LP3(E) is ideal for:

• Cellular Infrastructure, WiMAX & LTE/4G

• Software Deﬁned Radios

• Repeaters and Femtocells

• Access Points

Gain: 22 dB

Output IP3: +37 dBm

Single Supply: +3V to +5V

50 Ohm Matched Input/Output

16 Lead 3x3 mm SMT Package: 9 mm²

• Test & Measurement Equipment

Functional Diagram

General Description

The HMC758LP3(E) is a GaAs PHEMT MMIC Low

Noise Ampliﬁer that is ideal for Cellular Infrastructure,

WiMAX & LTE/4G basestation front-end receivers

operating between 700 and 2200 MHz. The ampliﬁer

has been optimized to provide 1.7 dB noise ﬁgure,

21 dB gain and +37 dBm output IP3 from a single

supply of +5V. Input and output return losses are

excellent with minimal external matching and bias

decoupling components. The HMC758LP3(E) can

be biased with +3V to +5V and features an externally

adjustable supply current, which allows the designer

to tailor the linearity performance of the LNA for

each application.

Electrical Speciﬁcations, T_A= +25° C, R1= 390Ω, R2= 560Ω*

Vdd = +3V

Vdd = +5V

Max. Min.

Parameter

Units

Min.

Typ.

700 - 1700

21.8

Max.

Min.

Typ.

1700 - 2200

19.4

Max.

Min.

Typ.

700 - 1700

22.7

Typ.

1700 - 2200

21.3

Max.

Frequency Range

Gain

MHz

Gain Variation Over Temperature

Noise Figure

0.005

1.6

0.01

0.004

1.7

0.01

dB/ °C

2.5

1.4

1.8

2.6

1.6

2.0

Input Return Loss

Output Return Loss

Output Power for 1 dB

Compression (P1dB)

20.5

190

22.5

dBm

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)

21.5

31.5

102

23.5

dBm

102

130

227

260

190

227

260

* R1 & R2 resistors set current, see application circuit herein

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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