Datasheet > HMC475ST89TR

HMC475ST89TR

更新时间： 2024-01-12 01:23:42

品牌	Logo	应用领域
HITTITE		射频微波
页数	文件大小	规格书
6页	202K
描述
Wide Band Low Power Amplifier,

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技术参数
数据手册

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HMC475ST89TR 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.74
射频/微波设备类型：	WIDE BAND LOW POWER	Base Number Matches：	1

HMC475ST89TR 数据手册

HMC475ST89 / 475ST89E

v02.0710

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 4.5 GHz

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

This pin is DC coupled.

An off chip DC blocking capacitor is required.

OUT

GND

RF output and DC Bias (Vcc) for the output stage.

These pins and package bottom must be connected to RF/

DC ground.

2, 4

Application Circuit

Recommended Bias Resistor Values for

Icc= 110 mA, Rbias= (Vs - Vcc) / Icc

Supply Voltage (Vs)

R^BIASVALUE

10V

27 Ω

½ W

12V

43 Ω

1 W

Note:

1. External blocking capacitors are required on

RFIN and RFOUT.

2. RBIAS provides DC bias stability over temperature.

9.1 Ω

¼ W

18 Ω

½ W

R^BIASPOWER RATING

Recommended Component Values for Key Application Frequencies

Frequency (MHz)

Component

900

1900

18 nH

100 pF

2200

18 nH

100 pF

2400

15 nH

100 pF

3500

8.2 nH

100 pF

4500

6.8 nH

100 pF

270 nH

0.01 μF

56 nH

100 pF

C1, C2

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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