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HMC478SC70TR PDF预览

HMC478SC70TR

更新时间: 2024-01-16 03:11:24
品牌 Logo 应用领域
HITTITE 射频微波
页数 文件大小 规格书
6页 992K
描述
Wide Band Low Power Amplifier,

HMC478SC70TR 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.68
射频/微波设备类型:WIDE BAND LOW POWERBase Number Matches:1

HMC478SC70TR 数据手册

 浏览型号HMC478SC70TR的Datasheet PDF文件第2页浏览型号HMC478SC70TR的Datasheet PDF文件第3页浏览型号HMC478SC70TR的Datasheet PDF文件第4页浏览型号HMC478SC70TR的Datasheet PDF文件第5页浏览型号HMC478SC70TR的Datasheet PDF文件第6页 
HMC478SC70 / 478SC70E  
v01.0811  
SiGe HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 4 GHz  
Typical Applications  
The HMC478SC70(E) is an ideal for:  
Features  
P1dB Output Power: +17 dBm  
8
• Cellular / PCS / 3G  
Gain: 23 dB  
• WiBro / WiMAX / 4G  
Output IP3: +31 dBm  
• Fixed Wireless & WLAN  
• CATV, Cable Modem & DBS  
• Microwave Radio & Test Equipment  
Cascadable 50 Ohm I/Os  
Single Supply: +5V to +8V  
Industry Standard SC70 Package  
Functional Diagram  
General Description  
The HMC478SC70(E) is  
a SiGe Heterojunction  
Bipolar Transistor (HBT) Gain Block MMIC SMT  
amplifier covering DC to 4 GHz. This industry  
standard SC70 packaged amplifier can be used as  
a cascadable 50 Ohm RF/IF gain stage as well as  
a LO or PA driver with up to +17 dBm output power.  
The HMC478SC70(E) offers 23 dB of gain with a  
+31 dBm output IP3 at 850 MHz while requiring only  
62 mA from a single positive supply. The Darlington  
topology results in reduced sensitivity to normal  
process variations and excellent gain stability over  
temperature while requiring a minimal number of  
external bias components.  
Electrical Specifications, Vs= 5V, Rbias= 18 Ohm, TA = +25° C  
Parameter  
Min.  
Typ.  
Max.  
0.02  
Units  
DC - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
20  
16  
13  
11  
24  
20  
17  
15  
dB  
dB  
dB  
dB  
Gain  
Gain Variation Over Temperature  
Input Return Loss  
DC - 4 GHz  
0.015  
dB/ °C  
DC - 3.0 GHz  
3.0 - 4.0 GHz  
15  
17  
dB  
dB  
DC - 3.0 GHz  
3.0 - 4.0 GHz  
15  
13  
dB  
dB  
Output Return Loss  
Reverse Isolation  
DC - 4 GHz  
20  
dB  
0.5 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
13  
11  
9
16  
15  
12  
dBm  
dBm  
dBm  
Output Power for 1 dB Compression (P1dB)  
0.5 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
31  
28  
25  
dBm  
dBm  
dBm  
Output Third Order Intercept (IP3)  
(Pout= 0 dBm per tone, 1 MHz spacing)  
DC - 3.0 GHz  
3.0 - 4.0 GHz  
2.5  
2.8  
dB  
dB  
Noise Figure  
Supply Current (Icq)  
62  
82  
mA  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 1  

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