HMC478SC70 / 478SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Typical Applications
The HMC478SC70(E) is an ideal for:
Features
P1dB Output Power: +17 dBm
9
• Cellular / PCS / 3G
Gain: 23 dB
• WiBro / WiMAX / 4G
Output IP3: +31 dBm
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SC70 Package
Functional Diagram
General Description
The HMC478SC70(E) is
a SiGe Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4 GHz. This industry stan-
dard SC70 packaged amplifier can be used as a cas-
cadable 50 Ohm RF/IF gain stage as well as a LO
or PA driver with up to +17 dBm output power. The
HMC478SC70(E) offers 23 dB of gain with a +31 dBm
output IP3 at 850 MHz while requiring only 62 mA
from a single positive supply. The Darlington topol-
ogy results in reduced sensitivity to normal process
variations and excellent gain stability over tempera-
ture while requiring a minimal number of external bias
components.
Electrical Specifications, Vs= 5V, Rbias= 18 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
0.02
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
20
16
13
11
24
20
17
15
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 4 GHz
0.015
dB/ °C
DC - 3.0 GHz
3.0 - 4.0 GHz
15
17
dB
dB
DC - 3.0 GHz
3.0 - 4.0 GHz
15
13
dB
dB
Output Return Loss
Reverse Isolation
DC - 4 GHz
20
dB
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
13
11
9
16
15
12
dBm
dBm
dBm
Output Power for 1 dB Compression (P1dB)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
31
28
25
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 3.0 GHz
3.0 - 4.0 GHz
2.5
2.8
dB
dB
Noise Figure
Supply Current (Icq)
62
82
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 96