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HMC-XDB112 PDF预览

HMC-XDB112

更新时间: 2024-11-07 20:17:19
品牌 Logo 应用领域
亚德诺 - ADI 射频微波
页数 文件大小 规格书
5页 228K
描述
HMC-XDB112

HMC-XDB112 数据手册

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HMC-XDB112  
v00.0907  
GaAs MMIC PASSIVE FREQUENCY  
DOUBLER, 10 - 15 GHz INPUT  
Typical Applications  
This HMC-XDB112 is ideal for:  
Features  
Conversion Loss: 13 dB  
Passive: No DC Bias Required  
Input Drive: +13 dBm  
• Point-to-Point Radios  
• VSAT  
2
High Fo Isolation: 30 dB  
Die Size: 2.2 x 0.65 x 0.1 mm  
• Test Instrumentation  
• Military & Space  
• Clock Generation  
General Description  
Functional Diagram  
The HMC-XDB112 is a monolithic Passive Frequency  
Doubler which utilizes GaAs Heterojunction Bipolar  
Transistor (HBT) technology, and is targeted to high  
volume applications where frequency doubling of a  
lower frequency is more economical than directly  
generating a higher frequency. All bond pads and  
the die backside are Ti/Au metallized and the HBT  
devices are fully passivated for reliable operation. The  
HMC-XDB112 Passive Doubler MMIC is compatible  
with conventional die attach methods, as well as  
thermocompression and thermosonic wire bonding,  
making it ideal for MCM and hybrid microcircuit  
applications. All data shown herein is measured with  
the chip in a 50 Ohm environment and contacted with  
RF probes.  
Electrical Specifications*, TA = 25 °C, Pin = +13 dBm  
Parameter  
Min.  
Typ.  
10 - 15  
20 - 30  
13  
Max.  
Units  
GHz  
GHz  
dB  
Frequency Range Input  
Frequency Range Output  
Conversion Loss  
Fo Isolation with respect to output  
*Unless otherwise indicated, all measurements are from probed die  
30  
dB  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
For price, delivery, and to place orders: Analog Devices, Inc.,  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
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2 - 68  
Application Support: Phone: 1-800-ANALOG-D  
Trademarks and registered trademarks are the property of their respective owners.  

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