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HM62V8512BLRR-7UL PDF预览

HM62V8512BLRR-7UL

更新时间: 2024-01-20 19:56:50
品牌 Logo 应用领域
日立 - HITACHI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
17页 79K
描述
4 M SRAM (512-kword x 8-bit)

HM62V8512BLRR-7UL 技术参数

生命周期:Transferred零件包装代码:TSOP2
包装说明:TSOP2,针数:32
Reach Compliance Code:compliant风险等级:5.7
最长访问时间:70 nsJESD-30 代码:R-PDSO-G32
长度:20.95 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:-20 °C组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:10.16 mm

HM62V8512BLRR-7UL 数据手册

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HM62V8512B Series  
4 M SRAM (512-kword × 8-bit)  
ADE-203-905G (Z)  
Rev. 6.0  
Mar. 31, 2000  
Description  
The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,  
higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The  
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high  
density mounting. The HM62V8512B is suitable for battery backup system.  
Features  
Single 3.0 V supply: 2.7 V to 3.6 V  
Access time: 70/85 ns (max)  
Power dissipation  
Active: 15 mW/MHz (typ)  
Standby: 3 µW (typ)  
Completely static memory. No clock or timing strobe required  
Equal access and cycle times  
Common data input and output: Three state output  
Directly LV-TTL compatible: All inputs  
Battery backup operation  

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