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HM62V8128DLTS-7 PDF预览

HM62V8128DLTS-7

更新时间: 2024-11-11 20:41:43
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
19页 142K
描述
Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, PLASTIC, TSOP1-32

HM62V8128DLTS-7 技术参数

生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSOP1,针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.56
Is Samacsys:N最长访问时间:70 ns
JESD-30 代码:R-PDSO-G32长度:11.8 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:-20 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:8 mm
Base Number Matches:1

HM62V8128DLTS-7 数据手册

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HM62V8128D Series  
1 M SRAM (128-kword × 8-bit)  
ADE-203-997 (Z)  
Preliminary, Rev. 0.0  
Jan. 20, 1999  
Description  
The Hitachi HM62V8128D Series is 1-Mbit static RAM organized 131,072-kword × 8-bit. HM62V8128D  
Series has realized higher density, higher performance and low power consumption by employing Hi-  
CMOS process technology. The HM62V8128D Series offers low power standby power dissipation;  
therefore, it is suitable for battery backup systems. It has package variations of standard 32-pin plastic  
SOP and standard 32-pin plastic TSOPI.  
Features  
Single 3.0 V supply: 2.7 V to 3.6 V  
Access time: 70 ns/85 ns (max)  
Power dissipation  
Active: 15 mW/MHz (typ)  
Standby: 2.4 µW (typ)  
Completely static memory.  
No clock or timing strobe required  
Equal access and cycle times  
Common data input and output  
Three state output  
Directly LV-TTL compatible all inputs  
Battery backup operation  
2 chip selection for battery backup  

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