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HM628511H

更新时间： 2024-11-19 22:35:47

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HM628511H 数据手册

HM628511H Series

4M High Speed SRAM (512-kword × 8-bit)

ADE-203-762D (Z)

Rev. 1.0

Sep. 15, 1998

Description

The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized

high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high

speed circuit designing technology. It is most appropriate for the application which requires high speed, high

density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged

in 400-mil 36-pin plastic SOJ.

Features

•

Single 5.0 V supply : 5.0 V ± 10 %

Access time 10 /12 /15 ns (max)

Completely static memory

No clock or timing strobe required

Equal access and cycle times

•

Directly TTL compatible

All inputs and outputs

•

Operating current : 180 / 160 / 140 mA (max)

TTL standby current : 70 / 60 / 50 mA (max)

CMOS standby current : 5 mA (max)

: 1.2 mA (max) (L-version)

•

Data retension current: 0.8 mA (max) (L-version)

Data retension voltage: 2 V (min) (L-version)

Center V_CCand V_SStype pinout

12 3 4 5 6 7...13

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型号	品牌	获取价格	描述	数据表
HM628511HC	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HCI	RENESAS	获取价格	Wide Temperature Range Version 4M High Speed
HM628511HCJP-10	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HCJP-12	ETC	获取价格	SRAM: Notes on Usage Technical Update/Device
HM628511HCJPI-12	RENESAS	获取价格	Wide Temperature Range Version 4M High Speed
HM628511HCLJP-10	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HCLJP-12	ETC	获取价格	Instructions for Using SRAM Devices Technical Update/Device
HM628511HI	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJP-10	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJP-12	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)