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HM628511HI

更新时间： 2024-11-19 22:35:47

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HM628511HI 数据手册

HM628511HI Series

4M High Speed SRAM (512-kword × 8-bit)

ADE-203-1035A (Z)

Rev. 1.0

Apr. 15, 1999

Description

The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized

high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high

speed circuit designing technology. It is most appropriate for the application which requires high speed, high

density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged

in 400-mil 36-pin plastic SOJ.

Features

•

Single 5.0 V supply : 5.0 V ± 10 %

Access time 12 /15 ns (max)

Completely static memory

No clock or timing strobe required

Equal access and cycle times

•

Directly TTL compatible

All inputs and outputs

•

Operating current : 160 / 140 mA (max)

TTL standby current : 60 / 50 mA (max)

CMOS standby current : 5 mA (max)

Center V_CCand V_SStype pinout

Temperature range: –40 to 85°C

12 3 4 5 6 7...13

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型号	品牌	获取价格	描述	数据表
HM628511HJP-10	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJP-12	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJP-15	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJPI-12	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJPI-15	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HLJP-10	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HLJP-10	RENESAS	获取价格	512KX8 CACHE SRAM, 10ns, PDSO36, 0.400 INCH, PLASTIC, SOJ-36
HM628511HLJP-12	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HLJP-15	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628512	HITACHI	获取价格	4 M SRAM (512-kword x 8-bit)