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HM628511HCJP-10

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HM628511HCJP-10 数据手册

HM628511HC Series

4M High Speed SRAM (512-kword × 8-bit)

ADE-203-1197 (Z)

Preliminary

Rev. 0.0

Nov. 9, 2000

Description

The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized

high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit

designing technology. It is most appropriate for the application which requires high speed, high density

memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-

mil 36-pin plastic SOJ.

Features

•

Single 5.0 V supply: 5.0 V ± 10 %

Access time: 10 ns (max)

Completely static memory

No clock or timing strobe required

Equal access and cycle times

Directly TTL compatible

•

All inputs and outputs

•

Operating current: 140 mA (max)

TTL standby current: 40 mA (max)

CMOS standby current : 5 mA (max)

: 1.2 mA (max) (L-version)

•

Data retension current: 0.8 mA (max) (L-version)

Data retension voltage: 2 V (min) (L-version)

Center V_CCand V_SStype pinout

Preliminary: The specification of this device are subject to change without notice. Please contact your

nearest Hitachi’s Sales Dept. regarding specification.

12 3 4 5 6 7...14

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型号	品牌	获取价格	描述	数据表
HM628511HCJP-12	ETC	获取价格	SRAM: Notes on Usage Technical Update/Device
HM628511HCJPI-12	RENESAS	获取价格	Wide Temperature Range Version 4M High Speed
HM628511HCLJP-10	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HCLJP-12	ETC	获取价格	Instructions for Using SRAM Devices Technical Update/Device
HM628511HI	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJP-10	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJP-12	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJP-15	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJPI-12	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)
HM628511HJPI-15	HITACHI	获取价格	4M High Speed SRAM (512-kword x 8-bit)