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HM628128DLTS-5SL PDF预览

HM628128DLTS-5SL

更新时间: 2024-12-01 20:18:47
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器光电二极管
页数 文件大小 规格书
20页 157K
描述
STANDARD SRAM, PDSO32, 8 X 13.40 MM, PLASTIC, TSOP1-32

HM628128DLTS-5SL 技术参数

生命周期:Obsolete零件包装代码:TSOP1
包装说明:8 X 13.40 MM, PLASTIC, TSOP1-32针数:32
Reach Compliance Code:unknown风险等级:5.12
最长访问时间:55 nsJESD-30 代码:R-PDSO-G32
长度:11.8 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:-20 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
宽度:8 mmBase Number Matches:1

HM628128DLTS-5SL 数据手册

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HM628128D Series  
1 M SRAM (128-kword × 8-bit)  
ADE-203-996 (Z)  
Preliminary, Rev. 0.0  
Jan. 20, 1999  
Description  
The Hitachi HM628128D Series is 1-Mbit static RAM organized 131,072-kword × 8-bit. HM628128D  
Series has realized higher density, higher performance and low power consumption by employing Hi-  
CMOS process technology. The HM628128D Series offers low power standby power dissipation;  
therefore, it is suitable for battery backup systems. It has package variations of standard 32-pin plastic DIP,  
standard 32-pin plastic SOP and standard 32-pin plastic TSOPI.  
Features  
Single 5 V supply: 5 V ± 10%  
Access time: 55 ns/70 ns (max)  
Power dissipation  
Active: 30 mW/MHz (typ)  
Standby: 10 µW (typ)  
Completely static memory.  
No clock or timing strobe required  
Equal access and cycle times  
Common data input and output  
Three state output  
Directly TTL compatible all inputs  
Battery backup operation  
2 chip selection for battery backup  

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