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HM628128DLT-5UL PDF预览

HM628128DLT-5UL

更新时间: 2024-12-01 20:18:47
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
20页 157K
描述
STANDARD SRAM, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32

HM628128DLT-5UL 技术参数

生命周期:Obsolete零件包装代码:TSOP1
包装说明:8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32针数:32
Reach Compliance Code:unknown风险等级:5.11
Is Samacsys:N最长访问时间:55 ns
JESD-30 代码:R-PDSO-G32长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:-20 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:8 mm
Base Number Matches:1

HM628128DLT-5UL 数据手册

 浏览型号HM628128DLT-5UL的Datasheet PDF文件第2页浏览型号HM628128DLT-5UL的Datasheet PDF文件第3页浏览型号HM628128DLT-5UL的Datasheet PDF文件第4页浏览型号HM628128DLT-5UL的Datasheet PDF文件第5页浏览型号HM628128DLT-5UL的Datasheet PDF文件第6页浏览型号HM628128DLT-5UL的Datasheet PDF文件第7页 
HM628128D Series  
1 M SRAM (128-kword × 8-bit)  
ADE-203-996 (Z)  
Preliminary, Rev. 0.0  
Jan. 20, 1999  
Description  
The Hitachi HM628128D Series is 1-Mbit static RAM organized 131,072-kword × 8-bit. HM628128D  
Series has realized higher density, higher performance and low power consumption by employing Hi-  
CMOS process technology. The HM628128D Series offers low power standby power dissipation;  
therefore, it is suitable for battery backup systems. It has package variations of standard 32-pin plastic DIP,  
standard 32-pin plastic SOP and standard 32-pin plastic TSOPI.  
Features  
Single 5 V supply: 5 V ± 10%  
Access time: 55 ns/70 ns (max)  
Power dissipation  
Active: 30 mW/MHz (typ)  
Standby: 10 µW (typ)  
Completely static memory.  
No clock or timing strobe required  
Equal access and cycle times  
Common data input and output  
Three state output  
Directly TTL compatible all inputs  
Battery backup operation  
2 chip selection for battery backup  

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