Datasheet > HM365797F-9:RD

HM365797F-9:RD

更新时间： 2024-12-01 20:47:39

品牌	Logo	应用领域
TEMIC		静态存储器
页数	文件大小	规格书
7页	102K
描述
SRAM,

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中文翻译

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技术参数
数据手册

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HM365797F-9:RD 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

HM365797F-9:RD 数据手册

HM 65797

256 K x 1 High Speed CMOS SRAM

Introduction

The HM 65797 is a high speed CMOS static RAM Easy memory expansion is provided by an active low chip

organized as 262, 144 × 1 bit. It is manufactured using select (CS) and three state drivers.

MHS high performance CMOS technology.

All inputs and outputs of the HM 65797 are TTL

Access times as fast 20ns are available with maximum compatible and operate from single 5 V supply thus

power consumption of only 770 mW.

simplifying system design.

The HM 65797 features fully static operation requiring no The HM 65797 is 100 % processed following the test

external clocks or timing strobes. The automatic methods of MIL STD 883 and/or ESA/SCC 9000 making

power-down feature reduces the power consumption by it ideally suitable for military/space applications that

67 % when the circuit is deselected.

demand superior levels of performance and reliability.

Features

D Fast access time

D Wide temperature range :

Commercial/industrial : 20/25/35/45/55 ns (max)

Military : 25/35/45/55 ns (max)

D Low power consumption

Active : 770 mW

–55°C to + 125°C

D 300 mils width package

D TTL compatible inputs and outputs asynchronous

D Capable of withstanding greater than 2000V electrostatic

discharge single 5 volt supply

Standby : 220 mW

Interface

Block Diagram

MATRA MHS

Rev. D (16 April.97)

Preliminary Information

12 3 4 5 6 7

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