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HM3-65728BN-5 PDF预览

HM3-65728BN-5

更新时间: 2024-09-18 23:56:03
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
8页 99K
描述
IC-16K FAST CMOS SRAM

HM3-65728BN-5 数据手册

 浏览型号HM3-65728BN-5的Datasheet PDF文件第2页浏览型号HM3-65728BN-5的Datasheet PDF文件第3页浏览型号HM3-65728BN-5的Datasheet PDF文件第4页浏览型号HM3-65728BN-5的Datasheet PDF文件第5页浏览型号HM3-65728BN-5的Datasheet PDF文件第6页浏览型号HM3-65728BN-5的Datasheet PDF文件第7页 
MATRA MHS  
HM 65728B  
2K × 8 High Speed CMOS SRAM  
Description  
The HM 65728B is a high speed CMOSstatic RAM Easy memory expansion is provided by an active low chip  
organized as 2048 × 8 bits. It is manufactured using select (CS) and active low output enable (OE) and three  
MHS’s high performance CMOS technology.  
state drivers.  
All inputs and outputs of the HM 65728 are TTL  
compatible and operate from single 5V supply thus  
simplifying system design.  
Access times as fast as 25 ns are available with maximum  
power consumption of only 600 mW.  
The HM 65728B features fully static operation requiring  
no external clocks or timing strobes. The automatic  
power-down feature reduces the power consumption by  
80 % when the circuit is deselected.  
The HM 65728B is 100 % processed following the test  
methods of MIL STD 883 and/or ESA/SCC 9000 making  
it ideally suitable for military/space applications that  
demand superior levels of performance and reliability.  
Features  
D Fast Access Time  
D 300 and 600 Mils Width Package  
D TTL Compatible Inputs and Outputs  
D Asynchronous  
Commercial : 25/35/45/55 ns (max)  
Military : 25/35/45/55 ns (max)  
D Low Power Consumption Active :  
550 mW (max)  
D Capable of Withstanding Greater than 2000 V Electrostatic  
Discharge  
Standby : 110 mW (max)  
D Wide Temperature Range :  
–55°C to + 125°C  
D Single 5 Volt Supply  
Interface  
Block Diagram  
Rev. C (16/08/95)  
1

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x8 SRAM