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HL1326GN96 PDF预览

HL1326GN96

更新时间: 2024-11-08 19:47:15
品牌 Logo 应用领域
瑞萨 - RENESAS 光电
页数 文件大小 规格书
12页 121K
描述
1310nm, LASER DIODE

HL1326GN96 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:5.02配置:SINGLE WITH BUILT-IN PHOTO DIODE
功能数量:1最高工作温度:85 °C
最低工作温度:-40 °C光电设备类型:LASER DIODE
标称输出功率:5 mW峰值波长:1310 nm
形状:ROUND尺寸:1.6 mm
最大阈值电流:20 mABase Number Matches:1

HL1326GN96 数据手册

 浏览型号HL1326GN96的Datasheet PDF文件第2页浏览型号HL1326GN96的Datasheet PDF文件第3页浏览型号HL1326GN96的Datasheet PDF文件第4页浏览型号HL1326GN96的Datasheet PDF文件第5页浏览型号HL1326GN96的Datasheet PDF文件第6页浏览型号HL1326GN96的Datasheet PDF文件第7页 
HL1326GN  
1.3 µm InGaAsP Laser Diode  
ADE-208-464 (Z)  
1st. Edition  
November 1996  
Description  
The HL1326GN is a 1.3 µm InGaAsP Fabry-Perot laser diode with a multi-quantum well (MQW)  
structure. It is suitable as a light source in short and medium range fiberoptic communication  
systems and other types of optical equipment. It has high optical power with low drive current  
and wide operating temperature range (–40 to +85°C). The compact package is suitable for module  
assembly.  
Features  
Wide operating temperature range: Topr = –40 to +85°C  
High output power: 10 mW(Pulse)  
5 mW(CW)  
Low operating current : Iop(PO = 5mW) = 20 mA (typ. @Tc = 25°C)  
Iop(PO = 5mW) = 40 mA (typ. @Tc = 85°C)  
Internal Circuit  
2
1
LD  
PD  
Po  
Glass  
window  
3
4

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