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HIP6601BECB-T PDF预览

HIP6601BECB-T

更新时间: 2024-01-29 17:08:13
品牌 Logo 应用领域
英特矽尔 - INTERSIL 驱动器
页数 文件大小 规格书
11页 344K
描述
Synchronous Rectified Buck MOSFET Drivers

HIP6601BECB-T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:HLSOP, SOP8,.25
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.16高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.89 mm
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:
标称输出峰值电流:0.73 A封装主体材料:PLASTIC/EPOXY
封装代码:HLSOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED电源:5/12,12 V
认证状态:Not Qualified座面最大高度:1.68 mm
子类别:MOSFET Drivers最大供电电压:12 V
最小供电电压:5 V电源电压1-最大:13.2 V
电源电压1-分钟:10.8 V电源电压1-Nom:12 V
表面贴装:YES技术:MOS
温度等级:OTHER端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

HIP6601BECB-T 数据手册

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HIP6601B, HIP6603B, HIP6604B  
®
J uly 20, 2005  
FN9072.7  
Synchronous Rectified Buck  
MOSFET Drivers  
Features  
• Drives Two N-Channel MOSFETs  
• Adaptive Shoot-Through Protection  
• Internal Bootstrap Device  
The HIP6601B, HIP6603B and HIP6604B are high-  
frequency, dual MOSFET drivers specifically designed to  
drive two power N-Channel MOSFETs in a synchronous  
rectified buck converter topology. These drivers combined  
with a HIP63xx or the ISL65xx series of Multi-Phase Buck  
PWM controllers and MOSFETs form a complete core-  
voltage regulator solution for advanced microprocessors.  
• Supports High Switching Frequency  
- Fast Output Rise Time  
- Propagation Delay 30ns  
• Small 8 LD SOIC and EPSOIC and 16 LD QFN Packages  
• Dual Gate-Drive Voltages for Optimal Efficiency  
• Three-State Input for Output Stage Shutdown  
• Supply Undervoltage Protection  
The HIP6601B drives the lower gate in a synchronous  
rectifier to 12V, while the upper gate can be independently  
driven over a range from 5V to 12V. The HIP6603B drives  
both upper and lower gates over a range of 5V to 12V. This  
drive-voltage flexibility provides the advantage of optimizing  
applications involving trade-offs between switching losses  
and conduction losses. The HIP6604B can be configured as  
either a HIP6601B or a HIP6603B.  
• QFN Package  
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat  
No Leads—Product Outline.  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile.  
The output drivers in the HIP6601B, HIP6603B and  
HIP6604B have the capacity to efficiently switch power  
MOSFETs at frequencies up to 2MHz. Each driver is  
capable of driving a 3000pF load with a 30ns propagation  
delay and 50ns transition time. These products implement  
bootstrapping on the upper gate with only an external  
capacitor required. This reduces implementation complexity  
and allows the use of higher performance, cost effective,  
N-Channel MOSFETs. Adaptive shoot-through protection is  
integrated to prevent both MOSFETs from conducting  
simultaneously.  
Applications  
• Core Voltage Supplies for Intel Pentium® III, AMD®  
Athlon™ Microprocessors  
• High Frequency Low Profile DC-DC Converters  
• High Current Low Voltage DC-DC Converters  
Related Literature  
• Technical Brief TB363, Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2002-2005. All Rights Reserved.  
All other trademarks mentioned are the property of their respective owners.  

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