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HIP6601ECB

更新时间: 2024-09-24 22:51:23
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英特矽尔 - INTERSIL 驱动器
页数 文件大小 规格书
11页 481K
描述
Synchronous Rectified Buck MOSFET Drivers

HIP6601ECB 数据手册

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HIP6601A, HIP6603A, HIP6604  
®
Augus t 2004  
FN4884.5  
Synchronous Rectified Buck MOSFET  
Drivers  
Features  
• Drives Two N-Channel MOSFETs  
• Adaptive Shoot-Through Protection  
• Internal Bootstrap Device  
The HIP6601A, HIP6603A and HIP6604 are high frequency,  
dual MOSFET drivers specifically designed to drive two  
power N-Channel MOSFETs in a synchronous rectified buck  
converter topology. These drivers combined with a HIP63xx  
or an ISL65xx Multi-Phase Buck PWM controller form a  
complete core-voltage regulator solution for advanced  
microprocessors.  
• Supports High Switching Frequency  
- Fast Output Rise Time  
- Propagation Delay 30ns  
• Small 8 Lead SOIC and EPSOIC and 16 Lead QFN  
Packages  
The HIP6601A drives the lower gate in a synchronous  
rectifier to 12V, while the upper gate can be independently  
driven over a range from 5V to 12V. The HIP6603A drives  
both upper and lower gates over a range of 5V to 12V. This  
drive-voltage flexibility provides the advantage of optimizing  
applications involving trade-offs between switching losses  
and conduction losses. The HIP6604 can be configured as  
either a HIP6601A or a HIP6603A.  
• Dual Gate-Drive Voltages for Optimal Efficiency  
• Three-State Input for Output Stage Shutdown  
• Supply Under Voltage Protection  
Applications  
• Core Voltage Supplies for Intel Pentium® III, AMD®  
Athlon™ Microprocessors  
• High Frequency Low Profile DC-DC Converters  
• High Current Low Voltage DC-DC Converters  
The output drivers in the HIP6601A, HIP6603A and HIP6604  
have the capacity to efficiently switch power MOSFETs at  
frequencies up to 2MHz. Each driver is capable of driving a  
3000pF load with a 30ns propagation delay and 50ns  
transition time. These products implement bootstrapping on  
the upper gate with only an external capacitor required. This  
reduces implementation complexity and allows the use of  
higher performance, cost effective, N-Channel MOSFETs.  
Adaptive shoot-through protection is integrated to prevent  
both MOSFETs from conducting simultaneously.  
Related Literature  
• Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Pinouts  
HIP6601ACB, HIP6603ACB (SOIC)  
HIP6601ECB, HIP6603ECB (EPSOIC)  
TOP VIEW  
Ordering Information  
UGATE  
BOOT  
PWM  
1
2
3
4
8
7
6
5
PHASE  
PVCC  
VCC  
TEMP. RANGE  
PKG.  
DWG. #  
o
PART NUMBER  
HIP6601ACB  
HIP6603ACB  
HIP6601ACB-T  
HIP6603ACB-T  
HIP6601ECB  
HIP6603ECB  
HIP6601ECB-T  
HIP6603ECB-T  
HIP6604CR  
( C)  
PACKAGE  
8 Ld SOIC  
8 Ld SOIC  
0 to 85  
0 to 85  
M8.15  
M8.15  
GND  
LGATE  
8 Ld SOIC Tape and Reel  
8 Ld SOIC Tape and Reel  
HIP6604 (QFN)  
TOP VIEW  
0 to 85  
0 to 85  
8 Ld EPSOIC M8.15B  
8 Ld EPSOIC M8.15B  
8 Ld EPSOIC Tape and Reel  
8 Ld EPSOIC Tape and Reel  
16 15 14 13  
NC  
BOOT  
PWM  
GND  
1
2
3
4
12 NC  
0 to 85  
16 Ld 4x4 QFN L16.4x4  
11 PVCC  
10 LVCC  
HIP6604CR-T  
16 Ld 4x4 QFN Tape and Reel  
9
VCC  
5
6
7
8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2003, 2004. All Rights Reserved.  
1
All other trademarks mentioned are the property of their respective owners.  

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