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HHY5W26CF-B PDF预览

HHY5W26CF-B

更新时间: 2024-11-11 14:50:51
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
25页 320K
描述
Synchronous DRAM, 8MX16, 9ns, CMOS, PBGA54

HHY5W26CF-B 技术参数

生命周期:Contact Manufacturer包装说明:FBGA, BGA54,9X9,32
Reach Compliance Code:compliant风险等级:5.48
最长访问时间:9 ns最大时钟频率 (fCLK):66 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:S-PBGA-B54内存密度:134217728 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
端子数量:54字数:8388608 words
字数代码:8000000最高工作温度:85 °C
最低工作温度:-25 °C组织:8MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA54,9X9,32
封装形状:SQUARE封装形式:GRID ARRAY, FINE PITCH
电源:1.8/2.5,2.5 V认证状态:Not Qualified
刷新周期:4096连续突发长度:1,2,4,8,FP
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.125 mA表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOMBase Number Matches:1

HHY5W26CF-B 数据手册

 浏览型号HHY5W26CF-B的Datasheet PDF文件第2页浏览型号HHY5W26CF-B的Datasheet PDF文件第3页浏览型号HHY5W26CF-B的Datasheet PDF文件第4页浏览型号HHY5W26CF-B的Datasheet PDF文件第5页浏览型号HHY5W26CF-B的Datasheet PDF文件第6页浏览型号HHY5W26CF-B的Datasheet PDF文件第7页 
HY5W2A6C(L/S)F / HY57W2A1620HC(L/S)T  
HY5W26CF / HY57W281620HCT  
4Banks x 2M x 16bits Synchronous DRAM  
Revision History  
Revision No.  
History  
Draft Date  
Remark  
0.3  
June 2001  
1. Datasheet separation (Normal & Low Power)  
2. Page2 ~ Page23 : Part Number Change  
HY5W26CF -> HY5W2A6CF  
3. Page2, 24 : Part Number Change  
HY57W281620HCT -> HY57W2A1620HCT  
4. Page18,19 : DC Characteristics II & III  
Some TBDs -> Fixed Values  
Note 3 : current -> current values  
5. Page24 : Package Information Change  
0.4  
0.9  
July 2001  
1. Page1 ~ Page23 : Part Number Change  
HY5W2A6CFL -> HY5W2A6CLF  
1. Qual. Pass  
2. Ball Capacitanace value correction  
3. ICC6 Current correction  
1.0  
1.1  
ICC6 Current correction  
1. ICC1,2 Spec Change  
2. Added VDDQ 2.5V Spec.  
1.2  
1.3  
1. Changed IDD6 Value.  
2. Changed Temperature Range.  
1. Changed Absolute Max Rating  
VDD,VDDQ,Vin,Vout from4.6 to 3.6.  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev. 1.3 / Dec. 01  

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